APTM120H29FG

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2 – 6

Electrical Characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

350

Zero Gate Voltage Drain Current

1500

µA

Drain – Source on Resistance

290

348

m

Ω

Gate Threshold Voltage

3

5

V

Gate – Source Leakage Current

±150

nA

Dynamic Characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

Input Capacitance

10.3

Output Capacitance

1.54

Reverse Transfer Capacitance

f = 1MHz

0.26

nF

Total gate Charge

374

Gate – Source Charge

48

Gate – Drain Charge

240

nC

Turn-on Delay Time

20

Rise Time

15

Turn-off Delay Time

160

Fall Time

Inductive switching @ 125°C

45

ns

Turn-on Switching Energy

1980

Turn-off Switching Energy

Inductive switching @ 25°C

1371

µJ

Turn-on Switching Energy

3131

Turn-off Switching Energy

Inductive switching @ 125°C

1714

µJ

Source - Drain diode ratings and characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

Tc = 25°C

34

Continuous Source current

(Body diode)

Tc = 80°C

25

A

Diode Forward Voltage

1.3

V

dv/dt

Peak Diode Recovery

18

V/ns

320

Reverse Recovery Time

650

ns

4

Reverse Recovery Charge

14

µC

dv/dt numbers reflect the limitations of the circuit rather than the device itself.

di/dt

≤ 700A/µs