Advanced Power

N-CHANNEL ENHANCEMENT MODE

Electronics Corp.

POWER MOSFET

▼ Simple Drive Requirement

30V

▼ Low On-resistance

18mΩ

▼ Fast Switching Characteristic

9.6A

Description

Absolute Maximum Ratings

Symbol

Units

V

V

A

A

A

W

W/℃

℃

℃

Symbol

Value

Unit

Rthj-a

Thermal Resistance Junction-ambient

3

Max.

50

℃/W

Data and specifications subject to change without notice

200521074-1/4

AP4800AGM

Rating

30

±25

9.6

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

3

Linear Derating Factor

0.02

Storage Temperature Range

Continuous Drain Current

3

7.7

Pulsed Drain Current

1

40

RoHS-compliant Product

Thermal Data

Parameter

Total Power Dissipation

2.5

-55 to 150

Operating Junction Temperature Range

-55 to 150

The Advanced Power MOSFETs from APEC provide the designer with

the best combination of fast switching, ruggedized device design, low

on-resistance and cost-effectiveness.

The SO-8 package is universally preferred for all commercial-industrial

surface mount applications and suited for low voltage applications

such as DC/DC converters.

S

S

S

G

D

D

D

D

SO-8

G

D

S