Bi−Directional Surge Protector

IPP

IPP

V

I

IR

IT

IT

IR

VRWM

VC VBR

VRWM

VC

VBR

ESDL2011

www.onsemi.com

2

ELECTRICAL CHARACTERISTICS

(TA = 25C unless otherwise noted)

Symbol

Parameter

IPP

Maximum Reverse Peak Pulse Current

VC

Clamping Voltage @ IPP

VRWM

Working Peak Reverse Voltage

IR

Maximum Reverse Leakage Current @ VRWM

VBR

Breakdown Voltage @ IT

IT

Test Current

*See Application Note AND8308/D for detailed explanations of

datasheet parameters.

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise specified)

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Reverse Working Voltage

VRWM

I/O Pin to GND

1.0

V

Breakdown Voltage

VBR

IT = 1 mA, I/O Pin to GND

1.4

1.65

2.3

V

Reverse Leakage Current

IR

VRWM = 1.0 V

30

500

nA

Clamping Voltage (Note 2)

VC

IEC61000−4−2, 8 kV Contact

Figures 1 and 2

V

Clamping Voltage

200 ns TLP

VC

IPP = 4 A

IEC61000−4−2 Level 1 Equivalent

(2 kV Contact, 4 kV Air)

3.5

4.0

V

IPP = 8 A

IEC61000−4−2 Level 2 Equivalent

(4 kV Contact, 8 kV Air)

4.8

6.0

Reverse Peak Pulse Current

per Figure 12

IPP

per IEC61000−4−5 (1.2/50 ms), Req = 12 W

3.5

4.5

A

Clamping Voltage 1.2/50 ms

Waveform per Figure 12

VC

IPP = 2.1 A, IEC61000−4−5 (1.2/50 ms),

Req = 12 W

2.9

3.5

V

Clamping Voltage 1.2/50 ms

Waveform per Figure 12

VC

IPP = 3.5 A, IEC61000−4−5 (1.2/50 ms),

Req = 12 W

3.6

4.0

V

Dynamic Resistance (TLP)

RDYN

I/O Pin to GND (4 A to 8 A, 200 ns TLP)

0.34

0.5

W

Junction Capacitance

CJ

VR = 0 V, f = 1 MHz

0.17

0.20

pF

Insertion Loss

IL

f = 5 GHz

f = 10 GHz

0.165

0.34

0.20

0.40

dB

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. For test procedure see application note AND8307/D.

3. ANSI/ESD STM5.5.1 − Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model.

TLP conditions: Z0 = 50 W, tp = 200 ns, tr = 4 ns, averaging window; t1 = 170 ns to t2 = 190 ns.

Figure 1. IEC61000−4−2 + 8 kV Contact ESD

Clamping Voltage

Figure 2. IEC61000−4−2 − 8 kV Contact ESD

Clamping Voltage

TIME (ns)

TIME (ns)

150

125

100

75

50

25

0

−25

−10

0

10

20

40

50

70

80

125

100

75

150

50

25

0

−25

30

60

90

100

−100

−90

−80

−70

−50

−40

−20

−10

−60

−30

0

10