MS2176 datasheet(1/6 Pages) ADPOW

部件名	MS2176

功能描述	RF AND MICROWAVE TRANSISTORS UHF PULSED APPLICATIONS

PDF	6 Pages

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制造商	ADPOW [Advanced Power Technology]

网页	http://www.advpowertech.com

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1 / 6 page

MS2176

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

DESCRIPTION:

The MS2176 is a gold metallized silicon NPN pulse power transistor

designed for applications requiring high peak power and low duty

cycles within the frequency range of 400 – 500 MHz.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

65

V

VCES

Collector-Emitter Voltage

65

V

VEBO

Emitter-Base Voltage

3.5

V

IC

Device Current

21.6

A

PDISS

Power Dissipation

875

W

TJ

Junction Temperature

+200

°°C

TSTG

Storage Temperature

-65 to +150

°°C

Thermal Data

RTH(j-c)

Junction-Case Thermal Resistance

0.2

°°C/W

Features

• 350 WATTS @ 10µSEC PULSE WIDTH, 10% DUTY

CYCLE

• 300 WATTS @ 250µSEC PULSE WIDTH 10% DUTY

CYCLE

• 9.5 DB MIN. GAIN

• REFRACTORY GOLD METALLIZATION

• EMITTER BALLASTING AND LOW THERMAL

RESISTANCE FOR RELIABILITY AND RUGGEDNESS

• INFINITE VSWR CAPABILITY AT SPECIFIED

OPERATING CONDITIONS

RF AND MICROWAVE TRANSISTORS

UHF PULSED APPLICATIONS

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

类似零件编号 - MS2176

制造商	部件名	数据表	功能描述
Microsemi Corporation	MS2176	187Kb / 4P	RF & MICROWAVE TRANSISTORS

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