STW9N150

Electrical characteristics

5/12

Table 7.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off-delay time

Fall time

VDD = 750 V, ID = 4 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 14)

41

14.7

86

52

ns

ns

ns

ns

Table 8.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

ISD

ISDM

(1)

1.

Pulse width limited by safe operating area

Source-drain current

Source-drain current (pulsed)

8

32

A

A

VSD

(2)

2.

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

ISD = 8 A, VGS = 0

1.6

V

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 8 A, di/dt = 100 A/µs

VDD= 60 V

(see Figure 16)

988

9.5

19.3

ns

µC

A

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 8 A, di/dt = 100 A/µs

VDD= 60 V TJ = 150 °C

(see Figure 16)

884

8.2

18.6

ns

µC

A