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FFSPF2065A 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited |
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FFSPF2065A 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() ISCD7029 eq FFSPF2065A SiC Schottky Barrier Diode www.iscsemi.com 1 FEATURES · High Surge Current Capacity · No Reverse Recovery/No Forward Recovery · Ease of Paralleling · No Reverse Recovery APPLICATIONS · General Purpose · SMPS, Solar Inverter, UPS · Power Switching Circuits ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VRRM Repetitisve Peak Reverse Voltage 650 V IF Continuous Forward Current Tc<67℃ 15 A Tc<135℃ 10 IF, Max Non-Repetitive Peak Forward Surge Current 1100 A IFSM Non-Repetitive Forward Surge Current Half-Sine Pulse, tp = 8.3 ms 105 A IFRM Repetitive Peak Forward Surge Current Half-Sine Pulse, tp = 8.3 ms 58 A Ptot Power Dissipation TC=25℃ 49 W TC=150℃ 8.1 TJ Junction Temperature -55~175 ℃ Tstg Storage Temperature Range -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.1 ℃ /W |
类似零件编号 - FFSPF2065A |
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类似说明 - FFSPF2065A |
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