REV 1.0

1

D-46-3

N-Channel Enhancement Mode

Field Effect Transistor

P0465CTF:TO-220F

P0465CTFS:TO-220FS

Halogen-Free & Lead-Free

NIKO-SEM

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNITS

Drain-Source Voltage

VDS

650

V

Gate-Source Voltage

VGS

±30

V

Continuous Drain Current

2

TC = 25 °C

ID

4

A

TC = 100 °C

2.4

Pulsed Drain Current

1 , 2

IDM

15

Avalanche Current

3

IAS

2

Avalanche Energy

3

EAS

20

mJ

Power Dissipation

TC = 25 °C

PD

24

W

TC = 100 °C

9.8

Operating Junction & Storage Temperature Range

Tj, Tstg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNITS

Junction-to-Case

RJC

5.1

°C / W

Junction-to-Ambient

RJA

62.5

1Pulse width limited by maximum junction temperature.

2Limited only by maximum temperature allowed

3VDD = 50V , L = 10mH, starting TJ = 25˚C

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNIT

MIN

TYP

MAX

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = 250A

650

V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250A

2.5

3.2

4.5

Gate-Body Leakage

IGSS

VDS = 0V, VGS = ±30V

±100

nA

1. GATE

2. DRAIN

3. SOURCE

PRODUCT SUMMARY

V(BR)DSS

RDS(ON)

ID

650V

2.7Ω

4A

G

D

S

100% UIS tested