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SS35 数据表(PDF) 2 Page - ON Semiconductor |
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SS35 数据表(HTML) 2 Page - ON Semiconductor |
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2 / 5 page ![]() SS32 − S310 www.onsemi.com 2 ABSOLUTE MAXIMUM RATINGS Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Units SS32 SS33 SS34 SS35 SS36 SS38 SS39 S310 VRRM Maximum Repetitive Reverse Voltage 20 30 40 50 60 80 90 100 V IF(AV) Maximum Average Forward Current at TA = 75°C 3.0 A IFSM Non−Repetitive Peak Forward Surge Current: 8.3 ms Single Half−Sine Wave 100 A dV/dt Maximum Voltage Rate of Change 10000 V/mS TSTG Storage Temperature Range −55 to +150 °C TJ Operating Junction Temperature −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter Value Unit PD Power Dissipation 2.27 W RθJA Thermal Resistance, Junction to Ambient (Note 1) 55 °C/W RθJL Thermal Resistance, Junction to Lead 17 °C/W 1. Device mounted on FE−4 PCB 0.55 x 0.55 inch (14 x 14 mm). ELECTRICAL CHARACTERISTICS Values are at TA = 25°C unless otherwise noted. Symbol Parameter Test Conditions Value Units SS32 SS33 SS34 SS35 SS36 SS38 SS39 S310 VF Forwarded Voltage IF = 3.0 A 500 750 850 mV IR Reverse Current at Rated VR TA = 25°C 0.5 mA TA = 100°C 20 10 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. TYPICAL CHARACTERISTICS Figure 1. Forward Current Derating Curve Figure 2. Non−Repetitive Surge Current 0 25 50 75 100 125 150 175 0 1 2 3 Number of Cycles at 60 Hz Ambient Temperature (5C) Resistive or Inductive Load P.C.B. Mounted on 0.55 x 0.55’’ (14 x 14) mm Copper Pad Areas 1 2 5 20 50 100 10 0 60 80 100 40 20 |
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