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BAV20WS-HF 数据表(PDF) 1 Page - Comchip Technology |
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BAV20WS-HF 数据表(HTML) 1 Page - Comchip Technology |
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1 / 4 page ![]() SMD Switching Diode Comchip Technology CO., LTD. BAV19WS-HF Thru. BAV21WS-HF RoHS Device Circuit Diagram Maximum Rating (at Ta=25°C unless otherwise noted) Halogen Free Features - Fast switching device (Trr < 50nS). - Power dissipation of 250mW. - High stability and high reliability. - Low reverse leakage. Mechanical data - Case: SOD-323, molded plastic. - Polarity: Color band denotes cathode end. - Epoxy UL: 94V-0. Note: Valid provided that electrodes are kept at ambient temperature. Dimensions in inches and (millimeter) SOD-323 0.071(1.80) 0.063(1.60) 0.010(0.25) 0.014(0.35) 0.106(2.70) 0.098(2.50) 0.055(1.40) 0.047(1.20) 0.035(0.90) 0.000(0.00) 0.004(0.10) 0.016(0.40) 0.006(0.15) 0.003(0.08) 0.031(0.80) 0.010(0.25) REV:A Page 1 QW-J0037 Symbol BAV19WS-HF Unit Parameter VR Reverse voltage V 120 mW 400 mA mA PD Power dissipation 250 °C RθJA °C/W Thermal resistance junction to ambient air 500 2 Operating junction temperature TJ A 150 BAV20WS-HF BAV21WS-HF VRM Peak reverse voltage 200 250 V 100 150 250 °C TSTG -65 to +150 Storage temperature range Average rectified current IO IFM Non-repetitive peak forward current IFSM 200 - Mounting position: Any. Non-repetitive peak forward surge current @ t=8.3ms |
类似零件编号 - BAV20WS-HF |
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类似说明 - BAV20WS-HF |
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