Parameter

Symbol

Rating

Unit

Drain-Source Voltage

VDSS

650

V

Drain Current

ID(Tc=25

)

9.5

A

Drain Current

ID(Tc=100

)

5.7

A

Drain Current - Pulsed

IDM

38

A

Gate-Source Voltage

VGSS

±20

V

Single Pulsed Avalanche Energy

EAS

700

mJ

Repetitive Avalanche Energy

EAR

15.6

mJ

Avalanche Current

IAR

9.5

A

Thermal Resistance, Junction to Case

R JC

2.5

/W

Thermal Resistance, Junction to Ambient

R JA

62.5

/W

Power Dissipation

PD(Tc=25

)

50

W

Operating and Storage Temperature Range

TJ,TSTG

-55 to 150

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

BVDSS

VGS=0V

ID=250A

650

V

Zero Gate Voltage Drain Current

IDSS

VDS=650V

V GS =0V

1

A

VDS=480V

TC=125

100

A

Gate-Body Leakage Current

Forward

IGSS

VGS=±20V

VDS=0V

±100

nA

Gate Threshold Voltage

VGS(th)

VDS=VGS

ID=250A

2.0

4.0

V

Static Drain-Source

On-Resistance

RDS(on)

VGS=10V

ID=4.75A

0.6

0.73

Forward Transconductance

gFS

VDS=40V

ID=4.75A

8.0

S

Drain-Source Diode Forward

Voltage

VSD

VGS=0V

IS=9.5A

1.4

V

Total Gate Charge

Qg

ID=10A

VDS=480V

VGS=10V

45

nC

Gate-to-Source Charge

Qgs

7.5

nC

Gate-to-Drain Charge

Qgd

18.5

nC

Input Capacitance

Ciss

VDS=25V

VGS=0V

f=1.0MHz

1570

2040

pF

Output Capacitance

Coss

166

215

pF

Reverse Transfer Capacitance

Crss

18

24

pF

Turn-On Delay Time

td(on)

VDD=300V

ID=9.5A

RG=25

23

55

ns

Turn-On Rise Time

tr

69

150

ns

Turn-Off Delay Time

td(off)

144

300

ns

Turn-Off Fall Time

tf

77

165

ns

ABSOLUTE MAXIMUM RATINGS(T =

C

25°C, unless otherwise specified)

ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)