Data Sheet

MAT12

Rev. A | Page 3 of 12

SPECIFICATIONS

ELECTRICAL CHARACTERISTICS

VCB = 15 V, IO = 10 µA, TA = 25°C, unless otherwise specified.

Table 1.

Parameter

Symbol

Test Conditions/Comments

Min

Typ

Max

Unit

DC AND AC CHARACTERISTICS

Current Gain1

hFE

IC = 1 mA

300

605

−40°C ≤ TA ≤ +85°C

300

IC = 10 µA

200

550

−40°C ≤ TA ≤ +85°C

200

Current Gain Match2

ΔhFE

10 µA ≤ IC ≤ 1 mA

0.5

5

%

Noise Voltage Density3

eN

IC = 1 mA, VCB = 0 V

fO = 10 Hz

1.6

2

nV/√Hz

fO = 100 Hz

0.9

1

nV/√Hz

fO = 1 kHz

0.85

1

nV/√Hz

fO = 10 kHz

0.85

1

nV/√Hz

Low Frequency Noise (0.1 Hz to 10 Hz)

eN p-p

IC = 1 mA

0.4

µV p-p

Offset Voltage

VOS

VCB = 0 V, IC = 1 mA

10

200

µV

−40°C ≤ TA ≤ +85°C

220

µV

Offset Voltage Change vs. VCB

ΔVOS/ΔVCB

0 V ≤ VCB ≤ VMAX4,1 µA ≤ IC ≤ 1 mA5

10

50

µV

Offset Voltage Change vs. IC

ΔVOS/ΔIC

1 µA ≤ IC ≤ 1 mA5, VCB = 0 V

5

70

µV

Offset Voltage Drift

ΔVOS/ΔT

−40°C ≤ TA ≤ +85°C

0.08

1

µV/°C

−40°C ≤ TA ≤ +85°C, VOS trimmed to 0 V

0.03

0.3

µV/°C

Breakdown Voltage, Collector to Emitter

BVCEO

40

V

Gain Bandwidth Product

fT

IC = 10 mA, VCE = 10 V

200

MHz

Collector-to-Base Leakage Current

ICBO

VCB = VMAX

25

500

pA

−40°C ≤ TA ≤ +85°C

3

nA

Collector-to-Collector Leakage Current6, 7

ICC

VCC = VMAX

35

500

pA

−40°C ≤ TA ≤ +85°C

4

nA

Collector-to-Emitter Leakage Current6, 7

ICES

VCE = VMAX, VBE = 0 V

35

500

pA

−40°C ≤ TA ≤ +85°C

4

nA

Input Bias Current

IB

IC = 10 µA

50

nA

−40°C ≤ TA ≤ +85°C

50

nA

Input Offset Current

IOS

IC = 10 µA

6.2

nA

−40°C ≤ TA ≤ +85°C

13

nA

Input Offset Current Drift6

ΔIOS/ΔT

IC = 10 µA, −40°C ≤ TA ≤ +85°C

40

150

pA/°C

Collector Saturation Voltage

VCE (SAT)

IC = 1 mA, IB = 100 µA

0.05

0.2

V

Output Capacitance

COB

VCB = 15 V, IE = 0 µA

23

pF

Bulk Resistance6

RBE

10 µA ≤ IC ≤ 10 mA

0.3

1.6

Ω

Collector-to-Collector Capacitance

CCC

VCC = 0 V

35

pF

1

Current gain is guaranteed with collector-to-base voltage (VCB) swept from 0 V to VMAX at the indicated collector currents.

2

Current gain match (ΔhFE) is defined as follows: ΔhFE = (100(ΔIB)(hFE min)/IC).

3

Noise voltage density is guaranteed, but not 100% tested.

4

This is the maximum change in VOS as VCB is swept from 0 V to 40 V.

5

Measured at IC = 10 µA and guaranteed by design over the specified range of IC.

6

Guaranteed by design.

7

ICC and ICES are verified by the measurement of ICBO.