Audio, Dual-Matched

NPN Transistor

Data Sheet

MAT12

Rev. A

Document Feedback

Information furnished by Analog Devices is believed to be accurate and reliable. However, no

responsibilityis assumedbyAnalogDevicesforitsuse,norforanyinfringementsof patentsorother

rightsofthirdpartiesthatmayresultfromitsuse.Specificationssubjecttochangewithoutnotice.No

license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

Trademarksandregisteredtrademarksarethepropertyoftheirrespectiveowners.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Tel: 781.329.4700

©2010–2014 Analog Devices, Inc. All rights reserved.

Technical Support

www.analog.com

FEATURES

Very low voltage noise: 1 nV/√Hz maximum at 100 Hz

Excellent current gain match: 0.5% typical

Low offset voltage (VOS): 200 μV maximum

Outstanding offset voltage drift: 0.03 μV/°C typical

High gain bandwidth product: 200 MHz

PIN CONFIGURATION

NOTE

1. SUBSTRATE IS CONNECTED

TO CASE ON TO-78 PACKAGE.

2. SUBSTRATE IS NORMALLY

CONNECTED TO THE MOST

NEGATIVE CIRCUIT POTENTIAL,

BUT CAN BE FLOATED.

C1

E1

B1

C2

E2

B2

1

6

2

5

3

4

Figure 1. 6-Lead TO-78

GENERAL DESCRIPTION

The MAT12 is a dual, NPN-matched transistor pair that is

specifically designed to meet the requirements of ultralow

noise audio systems.

With its extremely low input base spreading resistance (rbb'

is typically 28 Ω) and high current gain (hFE typically exceeds

600 at IC = 1 mA), the MAT12 can achieve outstanding signal-

to-noise ratios. The high current gain results in superior

performance compared to systems incorporating commercially

available monolithic amplifiers.

Excellent matching of the current gain (ΔhFE) to about 0.5%

and low VOS of less than 10 μV typical make the MAT12 ideal

for symmetrically balanced designs, which reduce high-order

amplifier harmonic distortion.

Stability of the matching parameters is guaranteed by protection

diodes across the base emitter junction. These diodes prevent

degradation of beta and matching characteristics due to reverse

biasing of the base emitter junction.

The MAT12 is also an ideal choice for accurate and reliable

current biasing and mirroring circuits. Furthermore, because

the accuracy of a current mirror degrades exponentially with

mismatches of VBE between transistor pairs, the low VOS of

the MAT12 does not need offset trimming in most circuit

applications.

The MAT12 is a good replacement for the MAT02, and its

performance and characteristics are guaranteed over the

extended temperature range of −40°C to +85°C.