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93C76-E/P 数据表(PDF) 3 Page - Microchip Technology

部件名 93C76-E/P
功能描述  8K/16K 5.0V Microwire Serial EEPROM
PDF  20 Pages
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制造商  MICROCHIP [Microchip Technology]
网页  http://www.microchip.com
标志 MICROCHIP - Microchip Technology

93C76-E/P 数据表(HTML) 3 Page - Microchip Technology

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 2004 Microchip Technology Inc.
DS21132E-page 3
93C76/86
TABLE 1-1:
DC CHARACTERISTICS
TABLE 1-2:
AC CHARACTERISTICS
DC CHARACTERISTICS
Applicable over recommended operating ranges shown below unless otherwise noted:
VCC = +4.5V to +5.5V
Commercial
(C): TA = 0°C to -40°C
Industrial
(I):
TA = -40°C to +85°C
Automotive
(E): TA = -40
°C to +125°C
Parameter
Symbol
Min.
Max.
Units
Conditions
High-level input voltage
VIH1
2.0
VCC +1
V
Low-level input voltage
VIL1
-0.3
0.8
V
Low-level output voltage
VOL1
—0.4
V
IOL = 2.1 mA; VCC = 4.5V
VOL2
—0.2
V
IOL =100
µA; VCC = 4.5V
High-level output voltage
VOH1
2.4
V
IOH = -400
µA; VCC = 4.5V
VOH2
VCC-0.2
V
IOH = -100
µA; VCC = 4.5V.
Input leakage current
ILI
-10
10
µAVIN = 0.1V to VCC
Output leakage current
ILO
-10
10
µAVOUT = 0.1V to VCC
Pin capacitance
(all inputs/outputs)
CINT
—7
pF
(Note 1)
TA = +25°C, FCLK = 1 MHz
Operating current
ICC write
3
mA
FCLK = 2 MHz; VCC = 5.5V
ICC read
1.5
mA
FCLK = 2 MHz; VCC = 5.5V
Standby current
ICCS
—100
µA
CLK = CS = 0V; VCC = 5.5V
DI = PE = VSS
ORG = VSS or VCC
Note 1:
This parameter is periodically sampled and not 100% tested.
AC CHARACTERISTICS
Applicable over recommended operating ranges shown below unless otherwise noted:
VCC = +4.5V to +5.5V
Commercial
(C): TA = 0°C to -40°C
Industrial
(I):
TA = -40°C to +85°C
Automotive
(E): TA = -40
°C to +125°C
Parameter
Symbol
Min.
Max.
Units
Conditions
Clock frequency
FCLK
2
MHz
Vcc
≥ 4.5V
Clock high time
TCKH
300
ns
Clock low time
TCKL
200
ns
Chip select setup time
TCSS
50
ns
Relative to CLK
Chip select hold time
TCSH
0—
ns
Chip select low time
TCSL
250
ns
Relative to CLK
Data input setup time
TDIS
100
ns
Relative to CLK
Data input hold time
TDIH
100
ns
Relative to CLK
Data output delay time
TPD
400
ns
CL = 100 pF
Data output disable time
TCZ
100
ns
(Note 1)
Status valid time
TSV
500
ns
CL = 100 pF
Program cycle time
TWC
10
ms
Erase/Write mode (Note 2)
TEC
15
ms
ERAL mode
TWL
—30
ms
WRAL mode
Endurance
1M
cycles
25°C, VCC = 5.0V, Block mode
(Note 3)
Note 1:
This parameter is periodically sampled and not 100% tested.
2:
Typical program cycle is 4 ms per word.
3:
This parameter is not tested but ensured by characterization. For endurance estimates in a specific
application, please consult the Total EnduranceModel which can be obtained from Microchip’s web site
at www.microchip.com.



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