 2004 Microchip Technology Inc.

DS21170E-page 1

24C01SC/24C02SC

Features:

• ISO Standard 7816 pad locations

• Low-power CMOS technology

- 1 mA active current typical

-10

µA standby current typical at 5.5V

• Organized as a single block of 128 bytes (128 x 8)

or 256 bytes (256 x 8)

• 100 kHz and 400 kHz compatibility

• Self-timed write cycle (including auto-erase)

• Page-write buffer for up to 8 bytes

• 2 ms typical write cycle time for page-write

• ESD protection > 4 kV

• 1,000,000 E/W cycles ensured

• Data retention > 200 years

• Available for extended temperature ranges

Description:

The

Microchip

Technology

Inc.

24C01SC

and

24C02SC are 1K-bit and 2K-bit Electrically Erasable

PROMs with bondpad positions optimized for smart

card applications. The devices are organized as a

single block of 128 x 8-bit or 256 x 8-bit memory with a

two-wire serial interface. The 24C01SC and 24C02SC

also have page-write capability for up to 8 bytes of data.

Die Layout

Block Diagram

- Commercial (C):

0°C

to +70°C

SDA

DC

SCL

HV Generator

EEPROM

Array

Page Latches

YDEC

XDEC

Sense Amp

R/W Control

Memory

Control

Logic

I/O

Control

Logic

SDA

SCL

Not recommended for new designs –

Please use 24LC01SC or 24LC02SC.