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L6382D 数据表(PDF) 9 Page - STMicroelectronics

部件名 L6382D
功能描述  Power management unit for microcontrolled ballast
PDF  22 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

L6382D 数据表(HTML) 9 Page - STMicroelectronics

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L6382D
Electrical characteristics
9/22
Symbol
Pin
Parameter
Test condition
Min
Typ
Max
Unit
TDELAY
12
Propagation delay
(LGI to LSG)
high to low and low to
high
300
ns
RB
12
Pull down Resistor
to OUT
20
K
Ω
High-side floating gate-driver supply
ILKBOOT
11
VBOOT pin leakage
current
VBOOT = 580V
5µA
ILKOUT
13
OUT pin leakage
current
VOUT = 562V
5µA
RDS(on)
Synchronous
bootstrap
diode on-
resistance
VLVG = HIGH
150
W
Forward Voltage
Drop
at 10 mA forward current
2.4
V
Forward Current
at 5V forward voltage
drop
20
mA
VREF
VREF
20
Reference voltage
15mA load.
3.267
3.3
3.366
V
20
Load regulation
IRef = -3 to +30 mA
-20
2
mV
20
Voltage change
15mA load; Vcc = 9V to
15V
15
mV
20
VREF latched
protection
2V
20
VREF Clamp
@3mA
VCC from 0 to VCCON
during start-up;Vcc from
VREF(OFF) to 0 during
shut-down; Vref <2V
1.2
1.4
V
IREF
20
Current Drive
Capability
-3
+30
mA
Save mode
-3
+10
mA
Overcurrent buffer stage
VCSI
19
Comparator Level
0.537
0.56
0.582
V
ICSI
19
Input Bias Current
500
nA
Propagation delay
CSO turn off to LSG low
200
ns
18
High output voltage I CSO= 200µA
VREF-
0.5V
18
Low output voltage I CSO = -150µA
0.5
V
Table 4. Electrical characteristcs (TJ = 25°C, VCC = 13V, CDRIVER = 1nF
unless otherwise specified) (continued)



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