TSH343 datasheet(4/17 Pages) STMICROELECTRONICS

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Electrical characteristics

TSH343

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Electrical characteristics

Table 3.

VCC = +5V single supply, Tamb = 25°C (unless otherwise specified)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

DC performance

VDC

Input DC shift

(see Figure 16 for the behaviour in

temperature)

RL =150Ω, Tamb

400

600

670

-40°C < Tamb < +85°C

530

Iib

Input bias current

Tamb , input to GND

18.2

μA

-40°C < Tamb < +85°C

20.7

Rin

Input resistance

Tamb

Cin

Input capacitance

Tamb

1pF

ICC

Supply current per buffer

no load, input to GND

14.4

-40°C < Tamb < +85°C

14.9

PSRR

Power supply rejection ratio(1)

20 log (

ΔVout/ΔVCC)

F=1MHz

-45

DC voltage gain

RL =150Ω, Vin = 1V

1.92

1.99

2.05

V/V

Variation of the DC voltage gain

between inputs of 0.3V and 1V

Input step from 0.3V to 1V

0.26

0.8

MG1

Gain matching between 3 channels

Input = 1V

0.5

MG0.3

Gain matching between 3 channels

Input = 0.3V

0.5

Dynamic performance and output characteristics

-3dB bandwidth

Small signal Vout = 20mVp

RL =150Ω

160

280

MHz

Gain flatness @ 0.1dB

Small signal Vout = 20mVp

RL =150Ω

FPBW

Full power bandwidth

Vout =2Vp-p, VICM =0.5V,

RL =150Ω

130

200

MHz

Delay between each channel(2)

0 to 30MHz

0.5

Slew rate (3)

Input step from 0V to 1V,

RL =150Ω

500

780

μs

VOH

High level output voltage

Vin DC = +1.5V, RL =150Ω

3.7

3.9

VOL

Low level output voltage

RL =150Ω

IOUT

Output current

Vout =2V, Tamb

-40°C < Tamb < +85°C

Output short-circuit current (Isource)

100

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