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STM802BDR 数据表(PDF) 3 Page - STMicroelectronics |
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STM802BDR 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 8 page ![]() STM802 3/8 TRUTH TABLES FOR ENABLE PIN Note 1: The TST pin is for testing purpose only. Must be left FLOATING for normal operation. ABSOLUTE MAXIMUM RATINGS Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied. ELECTRICAL CHARACTERISTICS OVER RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted. Typical values are at TA = 25°C) EN DEVICE LOW ENABLED HIGH DISABLED FLOAT DISABLED Symbol Parameter Value Unit VCC Supply Voltage -0.5 to 40 V VI DC Input Voltage of EN,FB -0.5 to 7 V IIK DC Input Diode Current ± 20 mA IOK DC Output Diode Current −20/+5 mA PD Maximum Power Dissipation 500 mW TL Lead Temperature (10sec) 300 °C TSTG Storage Temperature Range -65 to 150 °C Symbol Parameter Test Conditions Min. Typ. Max. Unit VCC Operative Supply Voltage Range DC only 8 35 V VIL Low Level Input Thresholds of Enable 0 0.8 V VIH High Level Input Thresholds of Enable 2 5 V VHYST Hysteresis of Enable Input 0.3 V IIN Input Leakage Current of Enable EN = GND -100 -60 -30 µA EN = 5.5V, VCC = 0 to 35V 0.1 1 µA IQ Quiescent Supply Current EN = 5.5V, VCC =9V, VFB = 0V 0.4 0.9 mA ICC Supply Current EN =GND,VCC =9V, VFB =0V CLOAD = 1000pF 0.7 1.2 mA VCLAMP Gate drive voltage clamp VCC > 20V 9 11 13 V V1 Voltage reference for Inrush current 314 345 380 mV V2 Voltage reference for Hold current 70 77 86 mV IINR/IHOLD Inrush current to hold current ratio 4.5 TINR Time duration of Inrush interval 56 64 72 ms IGH Gate control output source current VG =0V, VCC = 13V -1.6 -1 mA IGL Gate control output sink current VG =8V, VCC = 13V 2.5 4.5 mA VBYP Internal Pre-regulator output voltage IBYP = 1mA 4 V TC Time constant of feedback filter 2 µs TOP Operative Temperature Range -40 85 °C |
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