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TS615IPWT 数据表(PDF) 5 Page - STMicroelectronics |
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TS615IPWT 数据表(HTML) 5 Page - STMicroelectronics |
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5 / 36 page ![]() Electrical Characteristics TS615 5/36 Noise and distortion eN Equivalent Input Noise Voltage F = 100kHz 2.5 nV/ √Hz iNp Equivalent Input Noise Current (+) F = 100kHz 15 pA/ √Hz iNn Equivalent Input Noise Current (-) F = 100kHz 21 pA/ √Hz HD2 2nd Harmonic distortion (differential configuration) Vout = 14Vp-p, AV = 12dB F= 110kHz, RL = 50Ω diff. -87 dBc HD3 3rd Harmonic distortion (differential configuration) Vout = 14Vp-p, AV = 12dB F= 110kHz, RL = 50Ω diff. -83 dBc IM2 2nd Order Intermodulation Product (differential configuration) F1= 100kHz, F2 = 110kHz Vout = 16Vp-p, AV = 12dB RL = 50Ω diff. -76 dBc F1= 370kHz, F2 = 400kHz Vout = 16Vp-p, AV = 12dB RL = 50 Ω diff. -75 IM3 3rd Order Intermodulation Product (differential configuration) F1 = 100kHz, F2 = 110kHz Vout = 16Vp-p, AV = 12dB RL = 50Ω diff. -88 dBc F1 = 370kHz, F2 = 400kHz Vout = 16Vp-p, AV = 12dB RL = 50Ω diff. -87 Table 3. V CC = ±6V, Rfb=910Ω,Tamb = 25°C (unless otherwise specified) Symbol Parameter Test Condition Min. Typ. Max. Unit |
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