ELECTRICAL CHARACTERISTICS: T
C = 25° unless otherwise noted
ELECTRICAL CHARACTERISTICS: T
C = 25° unless otherwise noted
STATIC P/N OM11N60SA
STATIC P/N OM11N55SA
Parameter
Min. Typ. Max. Units Test Conditions
Parameter
Min. Typ. Max. Units Test Conditions
BV
DSS
Drain-Source Breakdown
600
V
V
GS = 0,
BV
DSS
Drain-Source Breakdown
550
V
V
GS = 0,
Voltage
I
D = 250 mA
Voltage
I
D = 250 mA
V
GS(th)
Gate-Threshold Voltage
2.0
4.0
V
V
DS = VGS, ID = 250 mAVGS(th)
Gate-Threshold Voltage
2.0
4.0
V
V
DS = VGS, ID = 250 mA
I
GSS
Gate-Body Leakage
± 100
nA
V
GS = ± 20 V
I
GSSF
Gate-Body Leakage Forward
±100
nA
V
GS = ± 20 V
I
DSS
Zero Gate Voltage Drain
0.1
0.25
mA
V
DS = Max. Rat., VGS = 0
I
DSS
Zero Gate Voltage Drain
0.1
0.25
mA
V
DS = Max. Rat., VGS = 0
Current
0.2
1.0
mA
V
DS = 0.8 Max. Rat., VGS = 0,
Current
0.2
1.0
mA
V
DS = 0.8 Max. Rat., VGS = 0,
T
C = 125° C
T
C = 125° C
I
D(on)
On-State Drain Current1
11.0
A
V
DS > ID(on) x RDS(on), VGS = 10 V
I
D(on)
On-State Drain Current1
11.0
A
V
DS > ID(on) x RDS(on), VGS = 10 V
V
DS(on)
Static Drain-Source On-State
3.1
V
V
GS = 10 V, ID = 5.5 A
V
DS(on)
Static Drain-Source On-State
3.3
V
V
GS = 10 V, ID = 5.5 A
Voltage1
Voltage1
R
DS(on)
Static Drain-Source On-State
.47
.50
V
GS = 10 V, ID = 5.5 A
R
DS(on)
Static Drain-Source On-State
.37
.44
V
GS = 10 V, ID = 5.5 A
Resistance1
Resistance1
R
DS(on)
Static Drain-Source On-State
1.0
V
GS = 10 V, ID = 5.5 A,
R
DS(on)
Static Drain-Source On-State
.88
V
GS = 10 V, ID = 5.5 A,
Resistance1
T
C = 125 C
Resistance1
T
C = 125 C
DYNAMIC
DYNAMIC
g
fs
Forward Transductance1
5.0
S(W )
V
DS
2 V
DS(on), ID = 5.5 A
g
fs
Forward Transductance1
5.0
S(W )
V
DS
2 V
DS(on), ID = 5.5 A
C
iss
Input Capacitance
3000
pF
V
GS = 0
C
iss
Input Capacitance
3000
pF
V
GS = 0
C
oss
Output Capacitance
440
pF
V
DS = 25 V
C
oss
Output Capacitance
440
pF
V
DS = 25 V
C
rss
Reverse Transfer Capacitance
220
pF
f = 1 MHz
C
rss
Reverse Transfer Capacitance
220
pF
f = 1 MHz
T
d(on)
Turn-On Delay Time
55
ns
V
DD = 210 V, ID @ 7.0 A
T
d(on)
Turn-On Delay Time
55
ns
V
DD = 210 V, ID @ 7.0 A
t
r
Rise Time
75
ns
R
g = 5 W , RL = 30 W
t
r
Rise Time
75
ns
R
g = 5 W , RL = 30 W
T
d(off)
Turn-Off Delay Time
225
ns
T
d(off)
Turn-Off Delay Time
225
ns
t
f
Fall Time
135
ns
t
f
Fall Time
135
ns
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
Continuous Source Current
- 11
A
Modified MOSPOWER
I
S
Continuous Source Current
- 11
A
Modified MOSPOWER
(Body Diode)
symbol showing
(Body Diode)
symbol showing
I
SM
Source Current1
- 52
A
the integral P-N
I
SM
Source Current1
- 52
A
the integral P-N
(Body Diode)
Junction rectifier.
(Body Diode)
Junction rectifier.
V
SD
Diode Forward Voltage1
- 1.4
V
T
C = 25 C, IS = -11 A, VGS = 0
V
SD
Diode Forward Voltage1
- 1.4
V
T
C = 25 C, IS = -11 A, VGS = 0
t
rr
Reverse Recovery Time
700
ns
T
J = 150 C,IF = IS,trr
Reverse Recovery Time
700
ns
T
J = 150 C,IF = IS,
dl
F/ds = 100 A/ms
dl
F/ds = 100 A/ms
1 Pulse Test: Pulse Width 300msec, Duty Cycle
2%.
1 Pulse Test: Pulse Width 300msec, Duty Cycle
2%.
(MOSFET) switching times are
essentially independent of
operating temperature.
(MOSFET) switching times are
essentially independent of
operating temperature.
G
D
S
G
D
S
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