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2N65L-TN3-R 数据表(PDF) 6 Page - Unisonic Technologies |
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2N65L-TN3-R 数据表(HTML) 6 Page - Unisonic Technologies |
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6 / 7 page ![]() 2N65-TC Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 6 of 7 www.unisonic.com.tw QW-R205-435.B TYPICAL CHARACTERISTICS (Cont.) Gate Threshold Voltage vs. Junction Temperature Junction Temperature, TJ (°C) Source Current vs. Source-Drain Voltage Source-Drain Voltage, VSD (V) Drain Current vs. Gate-Source Voltage Gate-Source Voltage, VGS (V) Drain Current, ID (A) 25°C TA=150°C Drain-Source On-Resistance vs. Drain Current TA=25°C VGS=10V Pulsed TA=25°C Pulsed Drain Current vs. Junction Temperature Junction Temperature, TJ (°C) ID=0.25mA Pulsed Power Dissipation vs. Junction Temperature Junction Temperature, TJ (°C) TO-252 25 50 75 100 125 150 10 0.1 1 0 0.5 1 1.5 2 0 25 50 75 100 125 150 25 50 75 100 125 150 3 1 2 0 0 10 20 50 40 30 1 1.5 2 2.5 4 3.5 3 0.3 0.5 0.7 0.9 1.1 1.3 0 2 4 6 8 10 7 6 2 0 5 4 3 1 0 1 2 4 3 |
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