2N80-C

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

4 of 9

www.unisonic.com.tw

QW-R205-507.C



ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS=0V, ID=250μA

800

V

Drain-Source Leakage Current

IDSS

VDS=800V, VGS=0V

10

μA

Gate-Source Leakage Current

IGSS

VGS=±30V, VDS=0V

±100 nA

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=250μA

3.0

5.0

V

Static Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=1.0A

5.6

Ω

DYNAMIC CHARACTERISTICS

Input Capacitance

CISS

VDS=25V, VGS=0V, f=1MHz

400

pF

Output Capacitance

COSS

54

pF

Reverse Transfer Capacitance

CRSS

6

pF

SWITCHING CHARACTERISTICS

Total Gate Charge (Note 1)

QG

VDS=640V, VGS=10V, ID=2A

IG=1mA (Note 1, 2)

17

nC

Gate-Source Charge

QGS

7

nC

Gate-Drain Charge

QGD

4

nC

Turn-On Delay Time (Note 1)

tD(ON)

VDD=100V, VGS=10V, ID =2A,

RG =25Ω (Note 1, 2)

8

ns

Turn-On Rise Time

tR

16.5

ns

Turn-Off Delay Time

tD(OFF)

36

ns

Turn-Off Fall Time

tF

30

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Continuous Drain-Source Diode

Forward Current

IS

2

A

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

4

A

Drain-Source Diode Forward Voltage (Note 1)

VSD

IS=2.0A, VGS=0V

1.4

V

Body Diode Reverse Recovery Time (Note 1)

trr

IS=2.0A, VGS=0V,

dIF/dt=100A/µs

346

nS

Body Diode Reverse Recovery Charge

Qrr

4.12

μC

Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%.

2. Essentially independent of operating temperature.