Fast Recovery Diodes (FRD)

Publication date: September 2007

SKJ00020AED

1

This product complies with RoHS Directive (EU 2002/95/EC).

MA3DF30

Silicon Mesa type

For high frequency rectification

For plasma display panel drive



Features



High switching speed trr



Soft recovery



Absolute Maximum Ratings Ta = 25°C

Parameter

Symbol

Rating

Unit

Repetitive peak reverse voltage

VRRM

300

V

Non-repetitive peak reverse surge voltage

VRSM

350

V

Forward current

TC = 25°C

IF

20

A

Non-repetitive peak forward surge current *

IFSM

100

A

Junction temperature

Tj

–40 to +150

°

C

Storage temperature

Tstg

–40 to +150

°

C

Note) *: 50 Hz sine wave 1 cycle (Non-repetitive peak current)



Electrical Characteristics Ta = 25°C±3°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Forward voltage

VF

IF = 20 mA

1.3

1.4

V

Reverse current

IRRM

VRRM = 300 V

50

m

A

Reverse recovery time *

trr

IF = 0.5 A, IR = 1.0 A

Irr = 0.25 A

15

25

ns

Thermal resistance (j-a)

Rth(j-c)

3.0

°

C/W

Thermal resistance (j-c)

Rth(j-a)

63

°

C/W

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2. Absolute frequency of input and output is 10 MHz.

3. *: trr measurement circuit

D.U.T

trr

0.25 × IR

IF

IR

50 Ω

5.5 Ω

50 Ω



Package



Code

TO-220D-A1



Pin Name

1: Anode

2: Cathode

3: Anode



Marking Symbol: MA3DF30



Intemal Connection

1

3

2