6N100-FC

Power MOSFET

UNISONIC TECHNOLOGIES CO.,LTD

3 of 9

www.unisonic.com.tw

QW-R205-517.B



ABSOLUTE MAXIMUM RATINGS (T

C = 25

°С, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

1000

V

Gate-Source Voltage

VGSS

±30

V

Drain Current

Continuous

ID

6

A

Pulsed (Note 2)

IDM

12

A

Avalanche Energy

Single Pulsed (Note 3)

EAS

252

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

2.2

V/ns

Power Dissipation

TO-220

PD

145

W

TO-220F/TO-220F1

TO-220F2

40

W

TO-251/TO-252

50

W

Junction Temperature

TJ

+150

°С

Storage Temperature

TSTG

-55 ~ +150

°С

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by maximum junction temperature.

3. L=30mH, IAS=4.1A, VDD=50V, RG

=25 Ω, Starting TJ = 25°C

4. ISD

≤ 6.0A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C



THERMAL DATA

PARAMETER

SYMBOL

RATING

UNIT

Junction to Ambient

TO-220/TO-220F

TO-220F1/TO-220F2

θJA

62.5

°C/W

TO-251/TO-252

110

°C/W

Junction to Case

TO-220

θJC

0.86

°C/W

TO-220F/TO-220F1

TO-220F2

3.125

°C/W

TO-251/TO-252

2.5 (Note)

°C/W

Note: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.