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TC7129 数据表(PDF) 8 Page - Microchip Technology |
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TC7129 数据表(HTML) 8 Page - Microchip Technology |
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8 / 28 page ![]() TC7129 DS21459D-page 8 © 2006 Microchip Technology Inc. Figure 3-1: Standard Circuit. 3.3 Integrating Capacitor (CINT) The charge stored in the integrating capacitor during the integrate phase is directly proportional to the input voltage. The primary selection criterion for CINT is to choose a value that gives the highest voltage swing while remaining within the high-linearity portion of the integrator output range. An integrator swing of 2V is the recommended value. The capacitor value can be calculated using the following equation: EQUATION 3-1: Using the values derived above (assuming 60 Hz operation), the equation becomes: EQUATION 3-2: The capacitor should have low dielectric absorption to ensure good integration linearity. Polypropylene and Teflon® capacitors are usually suitable. A good measurement of the dielectric absorption is to connect the reference capacitor across the inputs by connecting: Pin-to-Pin: 20 → 33 (CREF+ to IN HI) 30 → 32 (CREF– to IN LO) A reading between 10,000 and 9998 is acceptable; anything lower indicates unacceptably high dielectric absorption. 3.4 Reference Capacitor (CREF) The reference capacitor stores the reference voltage during several phases of the measurement cycle. Low leakage is the primary selection criterion for this com- ponent. The value must be high enough to offset the effect of stray capacitance at the capacitor terminals. A value of at least 1 μF is recommended. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 9V + Low Battery Continuity V+ 5 pF 120 kHz 10 pF 0.1 µF 20 k Ω 0.1 µF 100 k Ω CINT 0.1 µF V+ VIN – + 330 k Ω Crystal RO CO2 CRF DREF RREF CIF RIF CREF+ 1 µF 10 k Ω RBIAS 150 k Ω RINT Display Drive Outputs TC7129 CO1 CINT = tINT x IINT VSWING Where tINT is the integration time. CINT = = 0.1 μA 16.7 msec x 13.3 μA 2V |
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