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TCM680 数据表(PDF) 2 Page - Microchip Technology |
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TCM680 数据表(HTML) 2 Page - Microchip Technology |
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2 / 18 page ![]() TCM680 DS21486C-page 2 © 2005 Microchip Technology Inc. 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings† VIN .......................................................................+5.8V VOUT + ................................................................ +11.6V VOUT – .................................................................-11.6V VOUT + Short-Circuit Duration...................... Continuous VOUT + Current ....................................................75 mA VIN dV/dT ....................................................... 1 V/µsec Power Dissipation (TA ≤ 70°C) 8-Pin PDIP ..............................................730 mW 8-Pin SOIC ..............................................470 mW Operating Temperature Range............. -40°C to +85°C Storage Temperature Range ..............-65°C to +150°C Maximum Junction Temperature ...................... +150°C † Notice: Stresses above those listed under "Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability DC CHARACTERISTICS Electrical Specifications: Unless otherwise noted, VIN = +5V, TA = +25°C, refer to Figure 1-1. Parameters Sym Min Typ Max Units Conditions Supply Voltage Range VIN 2.0 — 5.5 V -40°C ≤ TA ≤ +85°C, RL = 2 kΩ Supply Current IIN —0.5 1.0 mA VIN = 3V, RL = ∞ —1.0 2.0 VIN = 5V, RL = ∞ —— 2.5 VIN = 5V, 0°C ≤ TA ≤ +70°C, RL = ∞ —— 3.0 VIN = 5V, -40°C ≤ TA ≤ +85°C, RL = ∞ Negative Charge Pump Output Source Resistance ROUT - — 140 180 Ω IL – = 10 mA, I L + = 0 mA, V IN = 5V — 180 250 IL – = 5 mA, I L + = 0 mA, V IN = 2.8V — — — — — — 220 250 — 0°C ≤ TA ≤ + 70°C -40°C ≤ TA ≤ + 85°C IL – = 10 mA, I L + = 0 mA, V IN = 5V Positive Charge Pump Output Source Resistance ROUT + 140 180 Ω IL += 10 mA, I L – = 0 mA, V IN = 5V — 180 250 IL += 5 mA, I L – = 0 mA, V IN = 2.8V — — — — — — 220 250 — 0°C ≤ TA ≤ + 70°C -40°C ≤ TA ≤ + 85°C IL + = 10 mA, I L – = 0 mA, V IN = 5V Oscillator Frequency FOSC —21 — kHz Power Efficiency PEFF —85 — % RL = 2 kΩ Voltage Conversion Efficiency VOUTEFF 97 99 — % VOUT +, R L = ∞ 97 99 — VOUT –, R L = ∞ |
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