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MCP6541-E/MS 数据表(PDF) 3 Page - Microchip Technology |
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MCP6541-E/MS 数据表(HTML) 3 Page - Microchip Technology |
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3 / 34 page  © 2006 Microchip Technology Inc. DS21696E-page 3 MCP6541/1R/1U/2/3/4 AC CHARACTERISTICS Push-Pull Output High-Level Output Voltage VOH VDD−0.2 — — V IOUT = -2 mA, VDD = 5V Low-Level Output Voltage VOL —— VSS+0.2 V IOUT = 2 mA, VDD = 5V Short-Circuit Current ISC — -2.5, +1.5 — mA VDD = 1.6V (Note 4) ISC —±30 — mA VDD = 5.5V (Note 4) Electrical Specifications: Unless otherwise indicated, VDD = +1.6V to +5.5V, VSS = GND, TA = +25°C, VIN+ = VDD/2, Step = 200 mV, Overdrive = 100 mV, and CL = 36 pF (Refer to Figure 1-2 and Figure 1-3). Parameters Sym Min Typ Max Units Conditions Rise Time tR —0.85 — µs Fall Time tF —0.85 — µs Propagation Delay (High-to-Low) tPHL —4 8 µs Propagation Delay (Low-to-High) tPLH —4 8 µs Propagation Delay Skew tPDS —±0.2 — µs (Note 1) Maximum Toggle Frequency fMAX — 160 — kHz VDD = 1.6V fMAX — 120 — kHz VDD = 5.5V Input Noise Voltage Eni — 200 — µVP-P 10 Hz to 100 kHz Note 1: Propagation Delay Skew is defined as: tPDS = tPLH - tPHL. DC CHARACTERISTICS (CONTINUED) Electrical Specifications: Unless otherwise indicated, VDD = +1.6V to +5.5V, VSS = GND, TA = +25°C,VIN+ = VDD/2, VIN– = VSS, and RL =100 kΩ to VDD/2 (Refer to Figure 1-3). Parameters Sym Min Typ Max Units Conditions Note 1: The input offset voltage is the center (average) of the input-referred trip points. The input hysteresis is the difference between the input-referred trip points. 2: VHYST at different temperatures is estimated using VHYST (TA) = VHYST + (TA - 25°C) TC1 + (TA - 25°C)2 TC2. 3: Input bias current at temperature is not tested for SC-70-5 package. 4: Limit the output current to Absolute Maximum Rating of 30 mA. MCP6543 CHIP SELECT (CS) CHARACTERISTICS Electrical Specifications: Unless otherwise indicated, VDD = +1.6V to +5.5V, VSS = GND, TA = +25°C, VIN+ = VDD/2, VIN– = VSS, and CL= 36 pF (Refer to Figures 1-1 and 1-3). Parameters Sym Min Typ Max Units Conditions CS Low Specifications CS Logic Threshold, Low VIL VSS —0.2 V DD V CS Input Current, Low ICSL —5.0 — pA CS = V SS CS High Specifications CS Logic Threshold, High VIH 0.8 VDD —VDD V CS Input Current, High ICSH —1 — pA CS = VDD CS Input High, VDD Current IDD —18 — pA CS = VDD CS Input High, GND Current ISS — –20 — pA CS = VDD Comparator Output Leakage IO(LEAK) —1 — pA VOUT = VDD, CS = VDD CS Dynamic Specifications CS Low to Comparator Output Low Turn-on Time tON —2 50 ms CS = 0.2 VDD to VOUT = VDD/2, VIN– = VDD CS High to Comparator Output High Z Turn-off Time tOFF —10 — µs CS = 0.8 VDD to VOUT = VDD/2, VIN– = VDD CS Hysteresis VCS_HYST —0.6 — V VDD = 5V |
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