25XX080A/B

DS21808D-page 2

© 2007 Microchip Technology Inc.

1.0

ELECTRICAL CHARACTERISTICS

Storage temperature .................................................................................................................................-65°C to 150°C

Ambient temperature under bias ...............................................................................................................-65°C to 125°C

ESD protection on all pins .......................................................................................................................................... 4 kV

TABLE 1-1:

DC CHARACTERISTICS

† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the

device. This is a stress rating only and functional operation of the device at those or any other conditions above those

indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an

extended period of time may affect device reliability.

DC CHARACTERISTICS

Industrial (I):

Param.

No.

Sym.

Characteristic

Min.

Max.

Units

Test Conditions

D001

High-level input

voltage

2.0

V

≥ 2.7V (Note)

D002

V

D003

Low-level input

voltage

-0.3

0.8

V

≥ 2.7V (Note)

D004

-0.3

D005

Low-level output

voltage

—0.4

V

D006

—0.2

V

D007

High-level output

voltage

—

V

μA

D008

Input leakage current

±1

D009

Output leakage

current

±1

D010

Internal Capacitance

(all inputs and

outputs)

—7

pF

D011

Operating Current

—

—

6

2.5

mA

mA

SO = Open

SO = Open

D012

—

—

3mA

D013

Iccs

Standby Current

—

—

5

1

μA

μA

Note:

This parameter is periodically sampled and not 100% tested.