AD8014

–4–

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily

accumulate on the human body and test equipment and can discharge without detection.

Although the AD8014 features proprietary ESD protection circuitry, permanent damage may

occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD

precautions are recommended to avoid performance degradation or loss of functionality.

WARNING!

ESD SENSITIVE DEVICE

ABSOLUTE MAXIMUM RATINGS

1

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12.6 V

Internal Power Dissipation2

Small Outline Package (R) . . . . . . . . . . . . . . . . . . . . 0.75 W

SOT-23-5 Package (RT) . . . . . . . . . . . . . . . . . . . . . . 0.5 W

Input Voltage Common Mode . . . . . . . . . . . . . . . . . . . . . .

±V

S

Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . .

±2.5 V

Output Short Circuit Duration

. . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves

Storage Temperature Range . . . . . . . . . . . . –65

°C to +150°C

Operating Temperature Range . . . . . . . . . . . –40

°C to +85°C

Lead Temperature (Soldering 10 sec) . . . . . . . . . . . . . +300

°C

ESD (Human Body Model) . . . . . . . . . . . . . . . . . . . . +1500 V

NOTES

1 Stresses above those listed under Absolute Maximum Ratings may cause perma-

nent damage to the device. This is a stress rating only, functional operation of the

device at these or any other conditions above listed in the operational section of this

specification is not implied. Exposure to Absolute Maximum Ratings for any

extended periods may affect device reliability.

2 Specification is for device in free air at 25

°C.

8-Lead SOIC Package

θ

JA = 155

°C/W.

5-Lead SOT-23 Package

θ

JA = 240

°C/W.

MAXIMUM POWER DISSIPATION

The maximum power that can be safely dissipated by the AD8014

is limited by the associated rise in junction temperature. The

maximum safe junction temperature for plastic encapsulated

devices is determined by the glass transition temperature of the

plastic. This is approximately +150

°C. Even temporarily ex-

ceeding this limit may cause a shift in parametric performance

due to a change in the stresses exerted on the die by the pack-

age. Exceeding a junction temperature of +175

°C may result in

device failure.

The output stage of the AD8014 is designed for large load cur-

rent capability. As a result, shorting the output to ground or to

power supply sources may result in a very large power dissipa-

tion. To ensure proper operation it is necessary to observe the

maximum power derating tables.

Table I. Maximum Power Dissipation vs. Temperature

Ambient Temp

Power Watts

Power Watts

C

SOT-23-5

SOIC

–40

0.79

1.19

–20

0.71

1.06

0

0.63

0.94

+20

0.54

0.81

+40

0.46

0.69

+60

0.38

0.56

+80

0.29

0.44

+100

0.21

0.31

Rev. C