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JCS6AN70RE-R-BR 数据表(PDF) 5 Page - JILIN SINO-MICROELECTRONICS CO., LTD. |
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JCS6AN70RE-R-BR 数据表(HTML) 5 Page - JILIN SINO-MICROELECTRONICS CO., LTD. |
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5 / 11 page ![]() R JCS6AN70E 版本:202401C 5/11 特征曲线ELECTRICAL CHARACTERISTICS (curves) On-Region Characteristics Transfer Characteristics 1 10 1 10 V GS Top 15V 10V 8V 7V 6.5V 6V 5.5V Bottom 5V Notes : 1. 250μs pulse test 2. T C=25℃ V DS [V] 2 4 6 8 10 0.1 1 10 Notes : 1.250μs pulse test 2.V DS=40V 25 ℃ V GS [V] 150 ℃ On-Resistance Variation vs. Drain Current and Gate Voltage Body Diode Forward VoltageVariation vs. Source Currentand 0.0 1.5 3.0 4.5 6.0 1.2 1.4 1.6 Note :T j=25℃ V GS=10V V GS=20V I D [A] Capacitance Characteristics Gate Charge Characteristics 0 2 4 6 8 10 0 2 4 6 8 10 12 14 16 18 20 22 V DS=560V V DS=350V V DS=140V Q g Toltal Gate Charge [nC] 0.1 1 10 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 Notes : 1. 250μs pulse test 2. V GS =0V 25 ℃ 150 ℃ V SD [V] |
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