GD751SD datasheet(1/2 Pages) GTM

部件名	GD751SD

功能描述	SURFACE MOUNT SCHOTTKY BARRIER DIODE

PDF	2 Pages

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制造商	GTM [GTM CORPORATION]

网页	http://www.gtm.com.tw

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ISSUED DATE :2004/09/20

REVISED DATE :

G

G D

D 775511S

S D

D

S

S U

U R

R F

F A

A C

C E

E M

M O

O U

U N

N T

T ,, S

S C

C H

H O

O T

T T

T K

K Y

Y B

B A

A R

R R

R II E

E R

R D

D II O

O D

D E

E

V O L T A G E 4 0 V, C U R R E N T 0 . 0 3 A

Description

The GD751SD is designed for high speed switching for detection and high reliability.

Package Dimensions

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

0.85

1.05

A1

0

0.10

L

0.20

0.40

A2

0.80

1.00

b

0.25

0.40

D

1.15

1.45

c

0.10

0.18

E

1.60

1.80

HE

2.30

2.70

Q1

0.15 BSC.

:

Parameter

Symbol

Ratings

Unit

Junction Temperature

Tj

+125

Storage Temperature

Tstg

-40 ~ +125

Maximum Peak Repetitive Reverse Voltage

VRRM

40

V

Maximum RMS Voltage

VRMS

28

V

Maximum DC Blocking Voltage

VDC

40

V

Peak Forward Surge Current at 8.3mSec single half sine-wave

IFSM

0.2

A

Typical Junction Capacitance between Terminal (Note 1)

CJ

2.0

pF

Maximum Average Forward Rectified Current

Io

0.03

A

Total Power Dissipation

PD

225

mW

Characteristics at Ta = 25 ::::

Characteristics

Symbol

Max

Unit

Test Condition

Maximum Instantaneous Forward Voltage

VF

0.37

V

IF = 1mA

Maximum Average Reverse Current

IR

0.5

uA

VR = 30V

Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 1.0 volt.

2. ESD sensitive product handling required.

类似零件编号 - GD751SD

制造商	部件名	数据表	功能描述
E-Tech Electronics LTD	GD751SD	138Kb / 2P	The GD751SD is designed for high speed switching for detection and high reliability.

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