GDMBD2004 datasheet(1/2 Pages) GTM

部件名	GDMBD2004

功能描述	SURFACE MOUNT,SWITCHING DIODE

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制造商	GTM [GTM CORPORATION]

网页	http://www.gtm.com.tw

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GDMBD2004

Page: 1/2

ISSUED DATE :2005/12/23

REVISED DATE :

G

G D

D M

M B

B D

D 22000044

S U R F A C E M O U N T, S W I T C H I N G D I O D E

V O L T A G E 3 0 0 V, C U R R E N T 0 . 2 2 5 A

Description

The GDMBD2004 is designed for ultra high speed switching.

Package Dimensions

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

0.85

1.05

A1

0

0.10

L

0.20

0.40

A2

0.80

1.00

b

0.25

0.40

D

1.15

1.45

c

0.10

0.18

E

1.60

1.80

HE

2.30

2.70

Q1

0.15 BSC.

Absolute Maximum Ratings (At TA = 25 : unless otherwise specified)

Parameter

Symbol

Ratings

Unit

Repetitive Peak Reverse Voltage

VRRM

300

V

Continuous reverse voltage

VR(VRWM)

240

V

RMS Reverse Voltage

VR(RMS)

170

V

Forward Continuous Current

IFM

225

mA

4

Non-Repetitive Peak Forward surge Current @Tp =1.0us

@Tp=1.0s

IFSM

1

A

Typical Junction Capacitance between Terminal (Note1)

CJ

5.0

pF

Max. Reverse Recovery Time (Note2)

TRR

50

nSec

Power Dissipation

PD

350

mW

Thermal Resistance Junction to Ambient Air

R JA

357

/W

:

Operation and Storage Temperature Range

TJ, TSTG

-65 ~ +150

:

Electrical Characteristics (At TA = 25 : unless otherwise noted)

Characteristics

Symbol

Min.

Max.

Unit

Test Conditions

Reverse Breakdown Voltage

BVR

300

-

V

IR=100uA

0.85

V

IF=20mA

-

1

V

IF=100mA

Forward Voltage

VF

-

1.25

V

IF=225mA

100

nA

VR=240V, TA=25 :

Reverse Current

IR

-

100

uA

VR=240V, TA=150 :

Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 0 volts.

2. Measured at applied forward current of 30mA, reverse current of 30mA, RL=100 and recovery to IRR=-3mA.

3. ESD sensitive product handling required.

类似零件编号 - GDMBD2004

制造商	部件名	数据表	功能描述
E-Tech Electronics LTD	GDMBD2004	225Kb / 2P	The GDMBD2004 is designed for ultra high speed switching

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