GI3669 datasheet(1/2 Pages) GTM

部件名	GI3669

功能描述	PNP EPITAXIAL PLANAR TRANSISTOR

PDF	2 Pages

Scroll/Zoom	100%

制造商	GTM [GTM CORPORATION]

网页	http://www.gtm.com.tw

标志

1 / 2 page

G

I3669

Page: 1/2

ISSUED DATE :2005/08/31

REVISED DATE :2005/11/28B

G

II33666699

N

N P

P N

N E

E P

P II T

T A

A X

X II A

A L

L P

P L

L A

A N

N A

A R

R T

T R

R A

A N

N S

S II S

S T

T O

O R

R

Description

The G

I3669 is designed for using in power amplifier applications, power switching applications.

Package Dimensions

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

6.40

6.80

G

0.50

0.70

B

5.20

5.50

H

2.20

2.40

C

6.80

7.20

J

0.45

0.55

D

7.20

7.80

K

0.45

0.60

E

2.30 REF.

L

0.90

1.50

F

0.60

0.90

M

5.40

5.80

Absolute Maximum Ratings (TA=25 )

::::

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

VCBO

80

V

Collector to Emitter Voltage

VCEO

80

V

Emitter to Base Voltage

VEBO

5

V

Collector Current (DC)

IC

2

A

Total Device Dissipation (TA=25 )

:

PD

1.25

W

Junction Temperature

TJ

150

:

Storage Temperature

Tstg

-55 ~ +150

:

Electrical Characteristics (TA = 25 : unless otherwise noted)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

80

-

V

IC=100uA, IE=0

BVCEO

80

-

V

IC=10mA, IB=0

BVEBO

5

-

V

IE=100uA, IC=0

ICBO

-

1

uA

VCB=80V, IE=0

IEBO

-

1

uA

VEB=5V, IC=0

*VCE(sat)

-

0.15

0.5

V

IC=1A, IB=50mA

*VBE(sat)

-

0.9

1.2

V

IC=1A, IB=50mA

*hFE1

70

-

240

VCE=2V, IC=0.5A

*hFE2

40

-

VCE=2V, IC=1.5A

fT

-

100

-

MHz

VCE=2V, IE=500mA, f=100MHz

Cob

-

30

-

pF

VCB=10V, IE=0, f=1MHz

ton (Turn-On Time)

-

0.2

-

us

tstg (Storage Time)

-

1.0

-

us

tf (Fall Time)

-

0.2

-

us

VCC=30V, RL=30 ,

IC=1A,

IB1=-IB2=50mA,

Duty Cycle 1%

*Pulse Test: Pulse Width 380 s, Duty Cycle 2%

Classification Of hFE1

Rank

O

Y

Range

70 ~ 140

120 ~ 240

TO-251

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