GI4672 datasheet(1/2 Pages) GTM

部件名	GI4672

功能描述	NPN EPITAXIAL SILICON TRANSISTOR

PDF	2 Pages

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制造商	GTM [GTM CORPORATION]

网页	http://www.gtm.com.tw

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1 / 2 page

G

I4672

Page: 1/2

ISSUED DATE :2005/07/15

REVISED DATE :

G

II44667722

N

N P

P N

N E

E P

P II T

T A

A X

X II A

A L

L S

S II L

L II C

C O

O N

N T

T R

R A

A N

N S

S II S

S T

T O

O R

R

Description

The G

I4672 is designed for low frequency amplifier applications.

Features

&Low saturation voltage, typically VCE(sat) =0.1V at IC/IB=1A/50mA

&

Excellent DC current gain characteristics

Package Dimensions

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

6.40

6.80

G

0.50

0.70

B

5.20

5.50

H

2.20

2.40

C

6.80

7.20

J

0.45

0.55

D

7.20

7.80

K

0.45

0.60

E

2.30 REF.

L

0.90

1.50

F

0.60

0.90

M

5.40

5.80

Absolute Maximum Ratings (TA=25 )

::::

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

VCBO

60

V

Collector to Emitter Voltage

VCEO

50

V

Emitter to Base Voltage

VEBO

6

V

Collector Current (DC)

IC

2

A

Collector Current (Pulse PW=10ms)

IC

5

A

Total Device Dissipation (TA=25 )

:

PD

1.5

W

Total Device Dissipation (TC=25 )

:

PD

10

W

Junction Temperature

TJ

150

:

Storage Temperature

Tstg

-55 ~ +150

:

Electrical Characteristics (TA = 25 : unless otherwise noted)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

60

-

V

IC=50uA, IE=0

BVCEO

50

-

V

IC=1mA, IB=0

BVEBO

6

-

V

IE=50uA, IC=0

ICBO

-

100

nA

VCB=60V, IE=0

IEBO

-

100

nA

VEB=5V, IC=0

*VCE(sat)

-

0.1

0.35

V

IC=1A, IB=50mA

*hFE

120

-

400

VCE=2V, IC=500mA

fT

-

210

-

MHz

VCE=2V, IE=500mA, f=100MHz

Cob

-

25

-

pF

VCB=10V, IE=0, f=1MHz

*Pulse Test: Pulse Width 380 s, Duty Cycle 2%

Classification Of hFE

Rank

A

B

Range

120 ~ 240

200 ~ 400

TO-251

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