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TDA8920TH 数据表(PDF) 6 Page - NXP Semiconductors

部件名 TDA8920TH
功能描述  2 x 50 W class-D power amplifier
PDF  16 Pages
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制造商  PHILIPS [NXP Semiconductors]
网页  http://www.nxp.com
标志 PHILIPS - NXP Semiconductors

TDA8920TH 数据表(HTML) 6 Page - NXP Semiconductors

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1998 Dec 01
6
Philips Semiconductors
Preliminary specification
2
× 50 W class-D power amplifier
TDA8920
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
QUALITY SPECIFICATION
Quality according to
“SNW-FQ-611-part E”, if this type is used as an audio amplifier.
SWITCHING CHARACTERISTICS
VDD = ±25 V; Tamb =25 °C; measured in Fig.5; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDD
supply voltage
−±30
V
Vms
mode select switch voltage
with respect to SGND
5.5
V
Vsc
short-circuit voltage of output pins
−±30
V
IOSM
non-repetitive peak output current
10
A
IORM
repetitive peak output current
7.5
A
Ptot
total power dissipation
60
W
Tstg
storage temperature
−55
+150
°C
Tamb
operating ambient temperature
−40
+85
°C
Tvj
virtual junction temperature
150
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth(j-a)
thermal resistance from junction to ambient
in free air
40
K/W
Rth(j-c)
thermal resistance from junction to case
10
K/W
SYMBOL
PARAMETER
MIN.
TYP.
MAX.
UNIT
fosc
oscillator frequency
400
500
600
kHz
VOSC(p-p)
voltage at tracking point (peak-to-peak value)
1.75
V



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