AD8515

Data Sheet

Rev. E | Page 4 of 16

VS = 3.0 V, VCM = VS/2, TA = 25°C, unless otherwise noted.

Table 2.

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

INPUT CHARACTERISTICS

Offset Voltage

VOS

VCM = VS/2

1

6

mV

−40°C < TA < +125°C

8

mV

Input Bias Current

IB

VS = 3.0 V

2

30

pA

−40°C < TA < +85°C

600

pA

−40°C < TA < +125°C

8

nA

Input Offset Current

IOS

1

10

pA

−40°C < TA < +125°C

500

pA

Input Voltage Range

0

3

V

Common-Mode Rejection Ratio

CMRR

0 V ≤ VCM ≤ 3.0 V

54

dB

−40°C < TA < +125°C

50

dB

Large Signal Voltage Gain

AVO

RL = 100 kΩ, 0.3 V ≤ VOUT ≤ 2.7 V

250

1000

V/mV

Offset Voltage Drift

ΔVOS/ΔT

4

μV/°C

OUTPUT CHARACTERISTICS

Output Voltage High

VOH

IL = 100 μA, −40°C < TA < +125°C

2.99

V

IL = 750 μA, −40°C < TA < +125°C

2.98

V

Output Voltage Low

VOL

IL = 100 μA, −40°C < TA < +125°C

10

mV

IL = 750 μA, −40°C < TA < +125°C

20

mV

POWER SUPPLY

Power Supply Rejection Ratio

PSRR

VS = 1.8 V to 5.0 V

65

85

dB

−40°C < TA < +125°C

57

80

dB

Supply Current/Amplifier

ISY

VOUT = VS/2

350

450

μA

−40°C < TA < +125°C

500

μA

DYNAMIC PERFORMANCE

Slew Rate

SR

RL = 10 kΩ

2.7

V/µs

Gain Bandwidth Product

GBP

5

MHz

NOISE PERFORMANCE

Voltage Noise Density

en

f = 1 kHz

22

nV/√Hz

f = 10 kHz

20

nV/√Hz

Current Noise Density

in

f = 1 kHz

0.05

pA/√Hz