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AD8606ARMZ-R7 数据表(PDF) 18 Page - Analog Devices |
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AD8606ARMZ-R7 数据表(HTML) 18 Page - Analog Devices |
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18 / 24 page ![]() AD8605/AD8606/AD8608 Data Sheet Rev. O | Page 18 of 24 Figure 52 shows a scope of the output at the snubber circuit. The overshoot is reduced from over 70% to less than 5%, and the ringing is eliminated by the snubber. Optimum values for RS and CS are determined experimentally. TIME (10µs/DIV) VS = ±2.5V AV = 1 RL = 10kΩ RS = 90Ω CL = 1000pF CS = 700pF Figure 52. Capacitive Load Drive with Snubber Table 5 summarizes a few optimum values for capacitive loads. Table 5. CL (pF) RS (Ω) CS (pF) 500 100 1000 1000 70 1000 2000 60 800 An alternate technique is to insert a series resistor inside the feedback loop at the output of the amplifier. Typically, the value of this resistor is approximately 100 Ω. This method also reduces overshoot and ringing but causes a reduction in the maximum output swing. LIGHT SENSITIVITY The AD8605ACB (WLCSP package option) is essentially a silicon die with additional postfabrication dielectric and intermetallic processing designed to contact solder bumps on the active side of the chip. With this package type, the die is exposed to ambient light and is subject to photoelectric effects. Light sensitivity analysis of the AD8605ACB mounted on standard PCB material reveals that only the input bias current (IB) parameter is impacted when the package is illuminated directly by high intensity light. No degradation in electrical performance is observed due to illumination by low intensity (0.1 mW/cm2) ambient light. Figure 53 shows that IB increases with increasing wavelength and intensity of incident light; IB can reach levels as high as 4500 pA at a light intensity of 3 mW/cm2 and a wavelength of 850 nm. The light intensities shown in Figure 53 are not normal for most applications, that is, even though direct sunlight can have intensities of 50 mW/cm2, office ambient light can be as low as 0.1 mW/cm2. WAVELENGTH (nm) 3500 0 350 2500 3000 2000 500 1000 1500 450 550 650 750 850 1mW/cm2 4000 4500 5000 3mW/cm2 2mW/cm2 Figure 53. AD8605ACB Input Bias Current Response to Direct Illumination of Varying Intensity and Wavelength When the WLCSP package is assembled on the board with the bump side of the die facing the PCB, reflected light from the PCB surface is incident on active silicon circuit areas and results in the increased IB. No performance degradation occurs due to illumination of the backside (substrate) of the AD8605ACB. The AD8605ACB is particularly sensitive to incident light with wavelengths in the near infrared range (NIR, 700 nm to 1000 nm). Photons in this waveband have a longer wavelength and lower energy than photons in the visible (400 nm to 700 nm) and near ultraviolet (NUV, 200 nm to 400 nm) bands; therefore, they can penetrate more deeply into the active silicon. Incident light with wavelengths greater than 1100 nm has no photoelectric effect on the AD8605ACB because silicon is transparent to wavelengths in this range. The spectral content of conventional light sources varies. Sunlight has a broad spectral range, with peak intensity in the visible band that falls off in the NUV and NIR bands; fluorescent lamps have significant peaks in the visible but not the NUV or NIR bands. Efforts have been made at a product level to reduce the effect of ambient light; the under bump metal (UBM) has been designed to shield the sensitive circuit areas on the active side (bump side) of the die. However, if an application encounters any light sensitivity with the AD8605ACB, shielding the bump side of the WLCSP package with opaque material should eliminate this effect. Shielding can be accomplished using materials such as silica-filled liquid epoxies that are used in flip-chip underfill techniques. WLCSP ASSEMBLY CONSIDERATIONS For detailed information on the WLCSP PCB assembly and reliability, see Application Note AN-617, MicroCSP™ Wafer Level Chip Scale Package. |
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