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NMOS Electrical Characteristics (TJ=25℃ unless otherwise noted)

Parameter

Symbol

Conditions

Min

Typ

Max

Units

Static Parameter

Drain-Source Breakdown Voltage

BVDSS

VGS= 0V, ID=250μA

30

-

-

V

Zero Gate Voltage Drain Current

IDSS

VDS=30V, VGS=0V

-

-

1

μA

VDS=30V, VGS=0V, Tj=150℃

-

-

100

Gate-Body Leakage Current

IGSS

VGS= ±20V, VDS=0V

-

-

±100

nA

Gate Threshold Voltage

VGS(th)

VDS= VGS, ID=250μA

1.0

2.

5

V

Static Drain-Source On-Resistance

RDS(on)

VGS=10V, ID=7A

-

15

m

Ω

VGS=4.5V, ID=5A

-

23

Diode Forward Voltage

VSD

IS=7A, VGS=0V

-

-

1.2

V

Gate resistance

RG

f=1MHz

-

2

-

Ω

Maximum Body-Diode Continuous

Current

IS

-

-

7

A

Dynamic Parameters

Input Capacitance

Ciss

VDS=15V, VGS=0V, f=1MHz

-

380

-

pF

Output Capacitance

Coss

-

75

-

Reverse Transfer Capacitance

Crss

-

60

-

Switching Parameters

Total Gate Charge

Qg

VGS=10V, VDS=15V, ID=7A

-

12.5

-

nC

Gate-Source Charge

Qgs

-

2.5

-

Gate-Drain Charge

Qgd

-

2.5

-

Reverse Recovery Charge

Qrr

IF=7A, di/dt=100A/us

-

1.5

-

nC

Reverse Recovery Time

trr

-

16

-

ns

Turn-on Delay Time

tD(on)

VGS=10V, VDD=15V, ID=7A

RGEN=3Ω

-

5

-

ns

Turn-on Rise Time

tr

-

30

-

Turn-off Delay Time

tD(off)

-

15

-

Turn-off fall Time

tf

-

20

-

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