GL949 datasheet(1/2 Pages) GTM

部件名	GL949

功能描述	PNP SILICON PLANAR HIGH CURRENT TRANSISTOR

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制造商	GTM [GTM CORPORATION]

网页	http://www.gtm.com.tw

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1 / 2 page

CORPORATION

GL949

Page: 1/2

ISSUED DATE :2006/11/20

REVISED DATE :

GL949

P N P S I L I C O N P L AN A R H I G H C U R R E N T T R AN S I S T O R

Description

The GL949 is designed for general purpose switching and amplifier applications.

Features

&6Amps continuous current, up to 20Amps pulse current

&Very low saturation voltages

Package Dimensions

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

6.70

7.30

B

13°TYP.

C

2.90

3.10

J

2.30 REF.

D

0.02

0.10

1

6.30

6.70

E

0°

10°

2

6.30

6.70

I

0.60

0.80

3

3.30

3.70

H

0.25

0.35

4

3.30

3.70

5

1.40

1.80

Absolute Maximum Ratings at Ta = 25 ::::

Parameter

Symbol

Ratings

Unit

Junction Temperature

Tj

+150

:

Storage Temperature

Tstg

-55~+150

:

Collector to Base Voltage

VCBO

-50

V

Collector to Emitter Voltage

VCEO

-30

V

Emitter to Base Voltage

VEBO

-6

V

Collector Current (DC)

IC

-5.5

A

Collector Current (Pulse)

ICM

-20

A

Total Power Dissipation

PD

3

W

*The power which can be dissipated assuming the device is mounted in typical manner on a PCB with copper equal to 2 inches x 2 inches.

Electrical Characteristics (Ta = 25 ,

: unless otherwise stated)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

-50

-

V

IC=-100uA , IE=0

BVCER

-50

-

V

IC=-1uA, RB 1k

BVCEO

-30

-

V

IC=-10mA, IB=0

BVEBO

-6

-

V

IE=-100uA ,IC=0

ICBO

-

-50

nA

VCB=-40V, IE=0

ICER

-

-50

nA

VCB=-40V, R 1k

IEBO

-

-10

nA

VEB=-6V, IC=0

*VCE(sat)1

-

-75

mV

IC=-500mA, IB=-20mA

*VCE(sat)2

-

-140

mV

IC=-1A, IB=-20mA

*VCE(sat)3

-

-270

mV

IC=-2A, IB=-200mA

*VCE(sat)4

-

-440

mV

IC=-5.5A, IB=-500mA

*VBE(sat)

-

-1.25

V

IC=-5.5A, IB=-500mA

*VBE(on)

-

-1.06

V

VCE=-1V, IC=-5.5A

*hFE1

100

-

VCE=-1V, IC=-10mA

*hFE2

100

-

300

VCE=-1V, IC=-1A

*hFE3

75

-

VCE=-1V, IC=-5A

*hFE4

-

35

-

VCE=-2V, IC=-20A

fT

-

100

-

MHz

VCE=-10V, IC=-100mA, f=50MHz

Cob

-

122

-

pF

VCB=-10V, IE=0, f=1MHz

SOT-223

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