M62021FP datasheet(3/14 Pages) RENESAS

3 / 14 page

M62021L/P/FP

REJ03D0784-0200 Rev.2.00 Jun 15, 2007

Page 3 of 13

Absolute Maximum Ratings

(Ta = 25°C, unless otherwise noted)

Item

Symbol

Ratings

Unit

Conditions

Input voltage

VIN

Output current

IOUT

100

800

8-pin SIP

625

8-pin DIP

Power dissipation

440

8-pin SOP

8-pin SIP

6.25

8-pin DIP

Thermal derating

4.4

mW/°C

≥ 25°C

8-pin SOP

Operating temperature

Topr

–20 to +75

°C

Storage temperature

Tstg

–40 to +125

°C

Electrical Characteristics

(Ta = 25°C, unless otherwise noted)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Detection voltage

4.2

4.4

4.6

VIN (at the change from H→L)

Hysteresis voltage

∆V

100

200

∆V

S = VSH – VSL

Temperature coefficient of

detection voltage

VS/∆T

—

0.005

—

%/°C

—

2.0

4.0

VIN = 4V

Circuit current

ICC

—

7.5

12.0

IOUT = 0mA

VIN = 5V

—

0.125

0.25

IOUT = 50mA

Difference between input and

output voltage

VDROP

—

0.2

0.4

VIN = 5V

IOUT = 80mA

Ct output voltage (high level)

VOH(Ct)

4.5

5.0

—

VIN = 5V *

Ct output voltage (low level)

VOL(Ct)

—

0.02

0.1

VIN = 4V *

RES output voltage (high level)

VOH(RES)

3.5

4.0

—

VIN = 4V *

—

0.02

—

RES output voltage (low level)

VOL(RES)

—

0.05

0.2

VIN = 5V

Isink = 1mA

RES output voltage (high level) V

OH(

RES)

4.5

5.0

—

VIN = 5V *

—

0.02

—

RES output voltage (low level)

VOL(RES)

—

0.05

0.2

VIN = 4V

Isink = 1mA

3.50

3.57

—

VIN = 4V *

CS output voltage (high level)

VOH(CS)

2.40

2.47

—

VIN = 0V, VBAT = 3V *

—

0.08

—

CS output voltage (low level)

VOL(CS)

—

0.1

0.3

VIN = 5V

Isink = 1mA

—

±0.5

VIN = 5V

Backup diode leakage current

—

±0.5

µA

VBAT = 3V

VIN = 0V

Backup diode forward direction

voltage

—

0.54

0.6

IF = 10µA

Delay time

tpd

VIN = 0V→5V, Ct = 4.7µF

Response time

—

5.0

25.0

µs

VIN = 5V→4V

RES limit voltage of operation

VOPL(RES)

—

0.65

—

Notes: 1. Regarding conditions to measure VOH and VOL, voltage values are to be generated by internal resistance only

and no external resistor is used.

2. These values are produced inserting an external resistor, RCS = 1 MΩ, between the CS pin and GND.

3. With no external resistor (10 k

Ω internal resistance only)

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