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ADA4077-2ARMZ-R7 数据表(PDF) 4 Page - Analog Devices |
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ADA4077-2ARMZ-R7 数据表(HTML) 4 Page - Analog Devices |
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4 / 25 page  Data Sheet ADA4077-1/ADA4077-2/ADA4077-4 SPECIFICATIONS analog.com Rev. F | 4 of 25 Table 2. Parameter Symbol Test Conditions/Comments Min Typ Max Unit Supply Current per Amplifier ISY VO = 0 V 400 450 µA −40°C < TA < +125°C 650 µA DYNAMIC PERFORMANCE Slew Rate SR RL = 2 kΩ 1.2 V/µs Settling Time to 0.1% tS VIN = 1 V step, RL = 2 kΩ, AV = −1 3 µs Gain Bandwidth Product GBP VIN = 10 mV p-p, RL = 2 kΩ, AV = +100 3.9 MHz Unity-Gain Crossover UGC VIN = 10 mV p-p, RL = 2 kΩ, AV = +1 3.9 MHz −3 dB Closed-Loop Bandwidth −3 dB AV = +1, VIN = 10 mV p-p, RL = 2 kΩ 5.9 MHz Phase Margin ΦM VIN = 10 mV p-p, RL = 2 kΩ, AV = +1 55 Degrees Total Harmonic Distortion Plus Noise THD + N VIN = 1 V rms, AV = +1, RL = 2 kΩ, f = 1 kHz 0.004 % NOISE PERFORMANCE Voltage Noise en p-p 0.1 Hz to 10 Hz 0.25 µV p-p Voltage Noise Density en f = 1 Hz 13 nV/√Hz f = 100 Hz 7 nV/√Hz f = 1000 Hz 6.9 nV/√Hz Current Noise Density in f = 1 kHz 0.2 pA/√Hz MULTIPLE AMPLIFIERS CHANNEL SEPARATION CS f = 1 kHz, RL = 10 kΩ −125 dB ELECTRICAL CHARACTERISTICS, ±15 V VSY = ±15 V, VCM = 0 V, TA = 25°C, unless otherwise noted. Table 3. Parameter Symbol Test Conditions/Comments Min Typ Max Unit INPUT CHARACTERISTICS Offset Voltage VOS ADA4077-1/ADA4077-2 B Grade, SOIC 10 35 µV −40°C < TA < +125°C 65 µV A Grade, SOIC 15 50 µV −40°C < TA < +125°C 105 µV A Grade, MSOP 50 90 µV −40°C < TA < +125°C 220 µV ADA4077-4 A Grade, SOIC 15 50 µV −40°C < TA < +125°C 105 µV A Grade, TSSOP 15 120 µV −40°C < TA < +125°C 220 µV Offset Voltage Drift ∆VOS/∆T ADA4077-1/ADA4077-2 B Grade, SOIC −40°C < TA < +125°C 0.1 0.25 µV/°C A Grade, SOIC −40°C < TA < +125°C 0.25 0.55 µV/°C A Grade, MSOP −40°C < TA < +125°C 0.5 1.2 µV/°C ADA4077-4 A Grade, SOIC −40°C < TA < +125°C 0.4 0.75 µV/°C A Grade, TSSOP −40°C < TA < +125°C 0.5 1.2 µV/°C Input Bias Current IB −1 −0.4 +1 nA −40°C < TA < +125°C −1.5 +1.5 nA Input Offset Current IOS −0.5 +0.1 +0.5 nA |
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