AD8007/AD8008

Rev. E | Page 6 of

20

ABSOLUTE MAXIMUM RATINGS

Table 3.

Parameter

Rating

Supply Voltage

12.6 V

Power Dissipation

See Figure 5

Common-Mode Input Voltage

±VS

Differential Input Voltage

±1.0 V

Output Short-Circuit Duration

See Figure 5

Storage Temperature Range

−65°C to +125°C

Operating Temperature Range

−40°C to +85°C

Lead Temperature (Soldering, 10 sec)

300°C

RMS output voltages should be considered. If RL is referenced to

VS, as in single-supply operation, then the total drive power is

VS × IOUT.

If the rms signal levels are indeterminate, then consider the

worst case, when VOUT = VS/4 for RL to midsupply

L

S

S

S

D

R

V

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4

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In single-supply operation, with RL referenced to VS, worst case is

VOUT = VS/2.

Stresses above those listed under Absolute Maximum Ratings

may cause permanent damage to the device. This is a stress

rating only; functional operation of the device at these or any

other conditions above those indicated in the operational

section of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect

device reliability.

Airflow increases heat dissipation, effectively reducing θJA. In

addition, more metal directly in contact with the package leads

from metal traces, through-holes, ground, and power planes

reduces the θJA. Care must be taken to minimize parasitic

capacitances at the input leads of high speed op amps, see the

Layout Considerations section.

Figure 5 shows the maximum safe power dissipation in the

package vs. the ambient temperature for the SOIC-8 (125°C/W),

MSOP-8 (150°C/W), and SC70-5 (210°C/W) packages on a

JEDEC standard 4-layer board. θJA values are approximations.

MAXIMUM POWER DISSIPATION

The maximum safe power dissipation in the AD8007/AD8008

packages is limited by the associated rise in junction temperature

(TJ) on the die. The plastic encapsulating the die locally reaches

the junction temperature. At approximately 150°C, which is the

glass transition temperature, the plastic changes its properties.

Even temporarily exceeding this temperature limit can change

the stresses that the package exerts on the die, permanently

shifting the parametric performance of the AD8007/AD8008.

Exceeding a junction temperature of 175°C for an extended

time can result in changes in the silicon devices, potentially

causing failure.

AMBIENT TEMPERATURE (°C)

2.0

1.5

0

0

0

1

0

6

–

–40

–20

0

20

40

60

80

1.0

0.5

SOIC-8

SC70-5

MSOP-8

The still-air thermal properties of the package and PCB (θJA),

ambient temperature (TA), and the total power dissipated in the

package (PD) determine the junction temperature of the die.

The junction temperature can be calculated as

TJ = TA + (PD × θJA)

Figure 5. Maximum Power Dissipation vs. Temperature for a 4-Layer Board

The power dissipated in the package (PD) is the sum of the

quiescent power dissipation and the power dissipated in the

package due to the load drive for all outputs. The quiescent

power is the voltage between the supply pins (VS) times the

quiescent current (IS). Assuming the load (RL ) is referenced to

midsupply, the total drive power is VS/2 × IOUT, some of which is

dissipated in the package and some in the load (VOUT × IOUT).

The difference between the total drive power and the load

power is the drive power dissipated in the package.

OUTPUT SHORT CIRCUIT

Shorting the output to ground or drawing excessive current for

the AD8007/AD8008 will likely cause catastrophic failure.

ESD CAUTION

PD = Quiescent Power + (Total Drive Power − Load Power)

L

OUT

L

OUT

S

S

S

D

R

V

R

V

V

I

V

P

2

2

)

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−

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+

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=