IRLR3110ZPBF datasheet(1/4 Pages) BYCHIP

部件名	IRLR3110ZPBF

功能描述	N-Channel Super Trench Power MOSFET

PDF	4 Pages

Scroll/Zoom	100%

制造商	BYCHIP [BYCHIP ELECTRONICS CO., LIMITED]

网页	http://www.bychip.cn/

标志

1 / 4 page

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Parameter

Limit

Symbol

Unit

Drain-Source Voltage

VDS

100

V

Gate-Source Voltage

VGS

±20

V

Drain Current-Continuous

ID

78

A

Drain Current-Continuous(TC=100℃)

D (100℃)

I

60

A

Pulsed Drain Current

IDM

320

A

Maximum Power Dissipation

PD

125

W

Derating factor

0.83

W/℃

Single pulse avalanche energy

(Note 5)

AS

E

320

mJ

Operating Junction and Storage Temperature Range

TJ,TSTG

-55 To 175

℃

Thermal Characteristic

Thermal Resistance,Junction-to-Case

(Note 2)

RθJC

1.2

℃

/W

N-Channel Super Trench Power MOSFET

Features

 VDS=

100V, ID= 78 A

RDS(ON) <

9.0mΩ @ VGS = 10V

RDS(ON) <

12 mΩ @ VGS =4.5V

●

Advanced Trench Technology

●

Provide Excellent RDS(ON) and Low Gate

Charge

●

Lead Free and Green Available

100% UIS TESTED!

100% ΔVds TESTED!

General Features

www.bychip.cn

Pin Assignment

TO-252-2L Top View

Schematic Diagram

IRLR3110ZPBF

v1.0

类似零件编号 - IRLR3110ZPBF

制造商	部件名	数据表	功能描述
International Rectifier	IRLR3110ZPBF	735Kb / 11P	AUTOMOTIVE MOSFET
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VBsemi Electronics Co.,...	IRLR3110ZPBF	1Mb / 8P	N-Channel 100-V (D-S) MOSFET
International Rectifier	IRLR3110ZPBF	322Kb / 11P	Advanced Process Technology, Ultra Low On-Resistance, 175C Operating Temperature

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类似说明 - IRLR3110ZPBF

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