IPT210N25NFD datasheet(1/3 Pages) ISC

部件名	IPT210N25NFD

功能描述	N-Channel MOSFET Transistor

PDF	3 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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1 / 3 page

ISF1265

eq IPT210N25NFD

N-Channel MOSFET Transistor

www.iscsemi.com

1

FEATURES

· Drain Current -ID= 69A@ TC=25℃

· Drain Source Voltage -VDSS= 250V(Min)

· Static Drain-Source On-Resistance

-RDS(on) = 21mΩ(Max)@VGS= 10V

APPLICATIONS

· Switch Mode Power Supply (SMPS)

· Uninterruptible Power Supply (UPS)

· Power Factor Correction (PFC)

Absolute Maximum Ratings(TC=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage

250

V

VGS

Gate-Source Voltage-Continuous

±

20

V

ID

Drain Current-Continuous

69

A

IDM

Drain Current-Single Pulse

276

A

PD

Total Dissipation @TC=25℃

375

W

TJ

Max. Operating Junction Temperature

175

℃

Tstg

Storage Temperature

-55~175

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

0.4

℃

/W

ELECTRICAL CHARACTERISTICS (TC=25℃)

类似零件编号 - IPT210N25NFD

制造商	部件名	数据表	功能描述
Infineon Technologies A...	IPT210N25NFD	1,005Kb / 10P	OptiMOS짧3 Power-Transistor, 250 V Rev.2.0,2016-01-11

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