SCS212AM datasheet(1/3 Pages) ISC

部件名	SCS212AM

功能描述	Silicon Carbide Schottky Diode

PDF	3 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

标志

1 / 3 page

ISCD7032

eq SCS212AM

Silicon Carbide Schottky Diode

www.iscsemi.com

1

FEATURES

· Reduced Temperature Dependence

· High-speed Switching Possible

· Shorter Recovery Time

APPLICATIONS

· PFC Boost Topology

· Data Center

· Secondary Side Rectification

ABSOLUTE MAXIMUM RATINGS(TC=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VRRM

Repetitisve Peak Reverse Voltage

650

V

IF

Continuous Forward Current

Tc= 75°C

12

A

IFSM

Non-Repetitive Forward Surge Current

TVJ= 25°C,tp=10ms, Sinusoidal

43

A

TVJ= 150°C,tp=10ms, Sinusoidal

34

IFRM

Repetitive Peak Forward Surge Current

32

A

I2t

I2t For Fusing

TVJ= 25°C,tp=10ms

9.2

A2S

TVJ= 150°C,tp=10ms

5.7

Ptot

Power Dissipation

Tc=25°C

37

W

TJ

Junction Temperature

-55~175

℃

Tstg

Storage Temperature Range

-55~175

℃

类似零件编号 - SCS212AM

制造商	部件名	数据表	功能描述
Rohm	SCS212AM	974Kb / 6P	SiC Schottky Barrier Diode

More results

类似说明 - SCS212AM

制造商	部件名	数据表	功能描述
Infineon Technologies A...	SIDC19D60SIC3	54Kb / 4P	Silicon Carbide Schottky Diode 22.04.2004
	SDD04S60	280Kb / 9P	Silicon Carbide Schottky Diode 2004-02-11
	SDP20S30	216Kb / 8P	Silicon Carbide Schottky Diode 2001-09-07
	SDT05S60	353Kb / 8P	Silicon Carbide Schottky Diode Rev. 2.1 2005-02-17
	SDP06S60	644Kb / 9P	Silicon Carbide Schottky Diode Rev. 2.4 2008-06-02
Cree, Inc	C3D08065A	544Kb / 6P	Silicon Carbide Schottky Diode
	C4D08120E	643Kb / 6P	Silicon Carbide Schottky Diode
	C3D08065I	509Kb / 6P	Silicon Carbide Schottky Diode
	C3D03065E	941Kb / 6P	Silicon Carbide Schottky Diode
	E4D20120G	2Mb / 6P	Silicon Carbide Schottky Diode Silicon Carbide Schottky Diode