M2012Y datasheet(1/2 Pages) MICRO-ELECTRONICS

部件名	M2012Y

功能描述	HIGH BRIGHTNESS AMBER SURFACE LIGHTING

PDF	2 Pages

Scroll/Zoom	100%

制造商	MICRO-ELECTRONICS [Micro Electronics]

网页	http://www.microelectr.com.hk

标志

1 / 2 page

M2012Y

HIGH BRIGHTNESS

AMBER

SURFACE LIGHTING

FEATURES:

GaAsP/GaP Amber Chip

Amber Diffused Lens

Low Power Requirements

Wide Viewing Angle

ABSOLUTE MAXIMUM RATINGS

Power dissipation/Chip

Pd

60mW

Continuous Forward Current/Chip

IF

20mA

Peak Forward Current/Chip

*IFP

100mA

(*Pulse Width = 1ms , Duty Ratio = 1/10)

Reverse Voltage

VR

5V

Operating Temperature Range

Topr

-20 to +80°C

Storage Temperature Range

Tstg

-25 to +85°C

Solder Temperature (1/16 Inch from body)

260℃

Maximum Soldering Time( ≤260°C)

5 sec

ELECTRO-OPTICAL CHARACTERISTICS

(Ta=25°C)

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

CONDITIONS

Forward Voltage/Chip

VF

2.1

2.8

V

IF=20mA

Reverse Current/Chip

IR

100

μA

VR=5V

Peak Wavelength

λp

589

nm

IF=20mA

Dominant Wavelength

λd

590

nm

IF=20mA

Spectral Line Half Width

Δλ

35

nm

IF=20mA

Luminous Intensity

IV

515

mcd

IF=10mA/Chip

16/5/2005

Sheet 1 of 2

(Ta=25°C)

MICRO

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