GSBAS16 datasheet(1/2 Pages) GTM

部件名	GSBAS16

功能描述	SURFACE MOUNT, SWITCHING DIODE

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制造商	GTM [GTM CORPORATION]

网页	http://www.gtm.com.tw

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1 / 2 page

CORPORATION

GSBAS16

Page: 1/2

ISSUED DATE :2006/12/12

REVISED DATE :

G

G S

S B

B A

AS

S 1166

S

S U

U R

R F

F A

A C

C E

E M

M O

O U

U N

N T

T ,, S

S W

W II T

T C

C H

H II N

N G

G D

D II O

O D

D E

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V O L T A G E 8 5 V, C U R R E N T 2 5 0 m A

Description

The GSBAS16 is designed for high-speed switching application in hybrid thick and thin-film circuits.

The devices is manufactured by the silicon epitaxial planar process and packed in a plastic surface mount

package.

Package Dimensions

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

0.80

1.10

L1

0.42 REF.

A1

0

0.10

L

0.15

0.35

A2

0.80

1.00

b

0.25

0.40

D

1.80

2.20

c

0.10

0.25

E

1.15

1.35

e

0.65 REF.

HE

1.80

2.40

Q1

0.15 BSC.

Absolute Maximum Ratings at TA = 25 ::::

Parameter

Symbol

Ratings

Unit

Junction Temperature

Tj

+150

:

Storage Temperature

Tstg

-65 ~ +150

:

Reverse Voltage

VR

85

V

Repetitive Reverse Voltage

VRRM

85

V

Forward Current

IO

250

mA

Repetitive Forward Current

IFM

500

mA

Forward Surge Current (1ms)

IFSM

1000

mA

Total Power Dissipation

PD

225

mW

Electrical Characteristics (at TA = 25 : unless otherwise noted)

Characteristic

Symbol

Min.

Max.

Unit

Test Conditions

Reverse Breakdown Voltage

V(BR)

85

-

V

IR=100uA

VF(1)

-

715

mV

IF=1mA

VF(2)

-

855

mV

IF=10mA

VF(3)

-

1000

mV

IF=50mA

Forward Voltage

VF(4)

-

1250

mV

IF=150mA

Reverse Current

IR

-

1

uA

VR=85V

Total Capacitance

CT

2

pF

VR=0, f=1MHz

Reverse Recovery Time

Trr

-

6

nS

IF=IR=10mA, RL=100 measured at IR=1mA

类似零件编号 - GSBAS16

制造商	部件名	数据表	功能描述
E-Tech Electronics LTD	GSBAS16	121Kb / 2P	S U R F A C E M O U N T , S W I T C H I N G D I O D E V O LTAG E 8 5 V, C U R R E N T 2 5 0mA

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