CORPORATION

GSBAS40

Page: 1/2

ISSUED DATE :2005/12/20

REVISED DATE :

G

S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E

V O L T A G E 4 0 V, C U R R E N T 0 . 2 A

Description

These schottky barrier diodes are designed for high speed switching applications, circuit protection and voltage

clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is

excellent for hand held and portable applications where space is limited.

Package Dimensions

Millimeter

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

0.80

1.10

L1

0.42 REF.

A1

0

0.10

L

0.15

0.35

A2

0.80

1.00

b

0.25

0.40

D

1.80

2.20

c

0.10

0.25

E

1.15

1.35

e

0.65 REF.

HE

1.80

2.40

Q1

0.15 BCS.

Parameter

Symbol

Ratings

Unit

Operating Junction Temperature

Tj

-55 ~ +125

:

Storage Temperature

Tstg

-55 ~ +150

:

Maximum Repetitive Peak Reverse Voltage

40

V

Thermal Resistance Junction to Ambient Air

445

: /W

Peak Forward Surge Current at tp < 1.0s

0.6

A

Maximum Average Forward Rectified Current

Io

0.2

A

Total Power Dissipation

PD

225

mW

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Reverse Breakdown Voltage

40

-

-

V

IR=10 A

-

-

380

IF1=1mA

Forward Voltage(tp < 300uS)

-

-

1000

mV

IF2=40mA

Reverse Leakage Current

-

200

nA

VR=30V

Total Capacitance

-

-

5.0

pF

VR=0V, f=1MHz

Reverse Recover Time

-

-

5.0

ns

IF=IR=10mA, RL=100 , Irr=1mA