GSBAS70 datasheet(1/2 Pages) GTM

部件名	GSBAS70

功能描述	SURFACE MOUNT SCHOTTKY BARRIER DIODE

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制造商	GTM [GTM CORPORATION]

网页	http://www.gtm.com.tw

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CORPORATION

GSAS70/A/C/S

Page: 1/2

ISSUED DATE :2005/12/29

REVISED DATE :

G

G S

S B

B A

AS

S 7700// A

A//C

C //S

S

S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E

V O L T A G E 7 0 V, C U R R E N T 7 0 m A

Description

These Schottky barrier diodes are designed for high speed switching applications, circuit protection and

voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is

excellent for hand held and portable applications where space is limited.

Package Dimensions

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

0.80

1.10

L1

0.42 REF.

A1

0

0.10

L

0.15

0.35

A2

0.80

1.00

b

0.25

0.40

D

1.80

2.20

c

0.10

0.25

E

1.15

1.35

e

0.65 REF.

HE

1.80

2.40

Q1

0.15 BCS.

Absolute Maximum Ratings at TA = 25 ::::

Parameter

Symbol

Ratings

Unit

Operating Junction Temperature

Tj

+125

:

Storage Temperature

Tstg

-65 ~ +125

:

Maximum Repetitive Peak Reverse Voltage

VRRM

70

V

Maximum Average Forward Rectified Current

Io

70

mA

Non- Repetitive Peak Forward Surge Current @ tp 1.0s

IFSM

100

mA

Thermal Resistance Junction to Ambient Air

R JA

445

: /W

Total Power Dissipation

PD

225

mW

Electrical Characteristics (at TA = 25 : unless otherwise noted)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Reverse Breakdown Voltage

V(BR)R

70

-

V

IR=10 A

-

410

IF1=1mA

-

750

IF1=10mA

Forward Voltage

VF

-

1000

mV

IF2=15mA

-

100

nA

VR1=50V

Reverse Leakage Current

IR

-

10

uA

VR2=70V

Total Capacitance

CT

-

2.0

pF

VR=0V, f=1MHz

Reverse Recover Time

Trr

-

5.0

ns

IF=IR=10mA, RL=100 , Irr=1mA

类似零件编号 - GSBAS70

制造商	部件名	数据表	功能描述
E-Tech Electronics LTD	GSBAS70-A-C-S	175Kb / 2P	S U R FA C E MO U N T, S C HO T T K Y B A R R I E R D I O D E V O LTAG E 7 0 V, C U R R E N T 7 0mA

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