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MBR460MFS 数据表(PDF) 2 Page - ON Semiconductor

部件名 MBR460MFS
功能描述  SWITCHMODE Power Rectifiers
PDF  6 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  ONSEMI [ON Semiconductor]
网页  http://www.onsemi.com
标志 ONSEMI - ON Semiconductor

MBR460MFS 数据表(HTML) 2 Page - ON Semiconductor

  MBR460MFS Datasheet HTML 1Page - ON Semiconductor MBR460MFS Datasheet HTML 2Page - ON Semiconductor MBR460MFS Datasheet HTML 3Page - ON Semiconductor MBR460MFS Datasheet HTML 4Page - ON Semiconductor MBR460MFS Datasheet HTML 5Page - ON Semiconductor MBR460MFS Datasheet HTML 6Page - ON Semiconductor  
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MBR460MFS, NRVB460MFS
www.onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
60
V
Average Rectified Forward Current
(Rated VR, TC = 165°C)
IF(AV)
4.0
A
Peak Repetitive Forward Current,
(Rated VR, Square Wave, 20 kHz, TC = 165°C)
IFRM
8.0
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
40
A
Storage Temperature Range
Tstg
−65 to +175
°C
Operating Junction Temperature
TJ
−55 to +175
°C
Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive)
EAS
10
mJ
ESD Rating (Human Body Model)
3B
ESD Rating (Machine Model)
M4
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Typ
Max
Unit
Thermal Resistance, Junction−to−Case, Steady State
(Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board)
RθJC
−
2.4
°C/W
ELECTRICAL CHARACTERISTICS
Instantaneous Forward Voltage (Note 1)
(iF = 4 Amps, TJ = 125°C)
(iF = 4 Amps, TJ = 25°C)
vF
0.65
0.71
0.72
0.74
V
Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, TJ = 125°C)
(Rated dc Voltage, TJ = 25°C)
iR
6.5
0.01
20
0.2
mA
1. Pulse Test: Pulse Width = 300
ms, Duty Cycle ≤ 2.0%.



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