GSMBT1815 datasheet(1/2 Pages) GTM

部件名	GSMBT1815

功能描述	NPN EPITAXIAL PLANAR TRANSISTOR

PDF	2 Pages

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制造商	GTM [GTM CORPORATION]

网页	http://www.gtm.com.tw

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1 / 2 page

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ISSUED DATE :2004/12/08

REVISED DATE :

G

G S

S M

M B

B T

T 11881155

N

N P

P N

N E

E P

P II T

T A

A X

X II A

A L

L P

P L

L A

A N

N A

A R

R T

T R

R A

A N

N S

S II S

S T

T O

O R

R

Description

The GSMBT1815 is designed for use in driver stage of AF amplifier and general purpose amplification.

Package Dimensions

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

0.80

1.10

L1

0.42 REF.

A1

0

0.10

L

0.15

0.35

A2

0.80

1.00

b

0.25

0.40

D

1.80

2.20

c

0.10

0.25

E

1.15

1.35

e

0.65 REF.

HE

1.80

2.40

Q1

0.15 BSC.

Absolute Maximum Ratings at Ta = 25 ::::

Parameter

Symbol

Ratings

Unit

Junction Temperature

Tj

+150

Storage Temperature

Tstg

-55~+150

Collector to Base Voltage

VCBO

60

V

Collector to Emitter Voltage

VCEO

50

V

Emitter to Base Voltage

VEBO

5

V

Collector Current

IC

150

mA

Total Power Dissipation

PD

225

mW

Characteristics at Ta = 25 ::::

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

60

-

V

IC=100uA

BVCEO

50

-

V

IC=1mA

BVEBO

5

-

V

IE=10uA

ICBO

-

100

nA

VCB=60V

IEBO

-

100

nA

VEB=5V

*VCE(sat)

-

250

mV

IC=100mA, IB=10mA

*VBE(sat)

-

1

V

IC=100mA, IB=10mA

*hFE1

120

-

700

VCE=6V, IC=2mA

*hFE2

25

-

VCE=6V, IC=150mA

fT

80

-

MHz

VCE=10V, IC=1mA, f=100MHz

Cob

-

3.5

pF

VCB=10V, f=1MHz

* Pulse Test: Pulse Width 380us, Duty Cycle 2%

Classification Of hFE1

Rank

C4Y

C4G

C4B

Range

120 - 240

200 - 400

350 - 700

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